A 16 MVA ANPC-PEBB with 6 kA IGCTs

The integrated gate commutated thyristor (IGCT) has steadily gained importance on the market since its introduction in 1996. Low on-state voltages and fast switching transients offer minimal semiconductor losses and the highest silicon utilization in medium voltage applications. The low component co...

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Bibliographic Details
Main Authors: Apeldoorn, O., Odegard, B., Steimer, P., Bernet, S.
Format: Conference Proceeding
Language:English
Subjects:
Circuits
Costs
Frequency conversion
Low voltage
Medium voltage
Power electronics
Power semiconductor switches
Silicon
Standards development
Thyristors
Online Access:Request full text
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Summary:The integrated gate commutated thyristor (IGCT) has steadily gained importance on the market since its introduction in 1996. Low on-state voltages and fast switching transients offer minimal semiconductor losses and the highest silicon utilization in medium voltage applications. The low component count in the reliable press-pack and the high utilization of silicon enable the design of low cost, reliable, compact and explosion free converters. Today 4.5 kV, 5.5 kV, 6 kV and 6.5 kV IGCTs are available. IGCT based converters dominate in industrial medium voltage drives (MVDs) as well as railway interties and other energy management systems. Recent developments are setting new converter standards.
ISSN:0197-2618
2576-702X
DOI:10.1109/IAS.2005.1518429