Modeling of IGBT resistive and inductive turn-on behavior

Although IGBT turn on losses can be comparable to turn off losses, IGBT turn on has not been as thoroughly studied in the literature. In the present work IGBT turn on under resistive and inductive load conditions is studied in detail through experiments, finite element simulations, and circuit simul...

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Bibliographic Details
Main Authors: Lu, L., Pytel, S.G., Santi, E., Bryant, A.T., Hudgins, J.L., Palmer, P.R.
Format: Conference Proceeding
Language:English
Subjects:
Circuit simulation
Conductivity
Equations
Finite element methods
Insulated gate bipolar transistors
Manufacturing
Semiconductor diodes
Stress
Switching converters
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Summary:Although IGBT turn on losses can be comparable to turn off losses, IGBT turn on has not been as thoroughly studied in the literature. In the present work IGBT turn on under resistive and inductive load conditions is studied in detail through experiments, finite element simulations, and circuit simulations using physics-based semiconductor models. Under resistive load conditions, it is critical to accurately model the conductivity modulation phenomenon. Under clamped inductive load conditions at turn-on there is strong interaction between the IGBT and the freewheeling diode undergoing reverse recovery. Physics-based IGBT and diode models are used that have been proved accurate in the simulation of IGBT turn-off.
ISSN:0197-2618
2576-702X
DOI:10.1109/IAS.2005.1518833