Comparison of DC, RF, and dispersion properties of SOI and strained-SOI N-MOSFETs

The operating performance of SOI and strained-SOI N-MOSFETs are compared. In particular, these properties are examined in detail: 1) electron mobility and DC characteristics, 2) high frequency behavior, 3) dispersion and self-heating effects, and 4) buried oxide interface trap density. Our results d...

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Bibliographic Details
Main Authors: Wong, P.K., Pejcinovic, B., Lee, J.J., Hsu, S.T.
Format: Conference Proceeding
Language:English
Subjects:
CMOS technology
Dispersion
Electron mobility
Electron traps
Laboratories
MOSFET circuits
Radio frequency
Silicon on insulator technology
Thermal conductivity
Wafer bonding
Online Access:Request full text
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Summary:The operating performance of SOI and strained-SOI N-MOSFETs are compared. In particular, these properties are examined in detail: 1) electron mobility and DC characteristics, 2) high frequency behavior, 3) dispersion and self-heating effects, and 4) buried oxide interface trap density. Our results demonstrate that SSOI technology can improve f/sub t/ and f/sub max/ conservatively by up to 50% without excessive dispersion/self-heating. Furthermore, measurements indicate that the SSOI wafer bonding process can produce an acceptable buried oxide interface trap density.
ISSN:2163-5137
DOI:10.1109/ISIE.2005.1529087