A highly efficient Q-band MMIC 2.8 Watt output power amplifier based on 0.15/spl mu/m InGaAs/GaAs pHEMT process technology

A highly efficient and high power monolithic power amplifier operating at Q-band is presented utilizing 0.15/spl mu/m pseudomorphic InGaAs/GaAs HEMT production process on 2-mil thick substrate. Over 42 to 46GHz frequency range, the amplifier demonstrated maximum power of 2.8 watts (34.5 dBm) and pow...

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Bibliographic Details
Main Authors: Aust, M.V., Sharma, A.K., Fordham, O., Grundbacher, R., To, R., Tsai, R., Lai, R.
Format: Conference Proceeding
Language:English
Subjects:
Frequency
Gallium arsenide
HEMTs
High power amplifiers
Indium gallium arsenide
MMICs
PHEMTs
Power amplifiers
Power generation
Production
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Summary:A highly efficient and high power monolithic power amplifier operating at Q-band is presented utilizing 0.15/spl mu/m pseudomorphic InGaAs/GaAs HEMT production process on 2-mil thick substrate. Over 42 to 46GHz frequency range, the amplifier demonstrated maximum power of 2.8 watts (34.5 dBm) and power-added-efficiency of 23 to 26% when operated at 5 volts and 250ma/mm. The amplifier attained maximum PAE of 24 to 29% and power of 33.6 to 34dBm when it is biased at 5 volts and 125ma/mm. At these power levels and power-added efficiencies, the amplifier exhibited power densities in excess of 430mW/mm. With device periphery ratio of 1:2.857, effective phase compensation of the input feed network, and low loss output combining network, the power amplifier has been able to attain state-of-the-art efficiency and power performance.
ISSN:1550-8781
2374-8443
DOI:10.1109/CSICS.2005.1531821