High performance ZnO nanowire field effect transistor

A zinc oxide (ZnO) nanowire field effect transistor having the highest mobility and lowest subthreshold slope obtained to date (from ZnO) is reported. The device consists of a single nanowire with self-aligned gate electrodes having well defined nanoscale spacing, independent of lithographic definit...

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Bibliographic Details
Main Authors: Cha, S.N., Jang, J.E., Choi, Y., Ho, G.W., Kang, D.-J., Hasko, D.G., Welland, M.E., Amaratunga, G.A.J.
Format: Conference Proceeding
Language:English
Subjects:
Chemicals
Dielectrics and electrical insulation
Electrodes
Fabrication
FETs
MOSFETs
Niobium
Semiconductivity
Semiconductor materials
Zinc oxide
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Summary:A zinc oxide (ZnO) nanowire field effect transistor having the highest mobility and lowest subthreshold slope obtained to date (from ZnO) is reported. The device consists of a single nanowire with self-aligned gate electrodes having well defined nanoscale spacing, independent of lithographic definition. The fabricated device exhibits a transconductance of 3.06 /spl mu/S, a mobility of 450 cm/sup 2//Vs and a subthreshold swing of 129 mV/decade. The transistor also shows an on/off current ratio of 10/sup 6/.
ISSN:1930-8876
DOI:10.1109/ESSDER.2005.1546624