Probing ultrafast carrier dynamics in semiconductor nanostructures with terahertz pulses

We use time-resolved terahertz spectroscopy to probe ultrafast carrier dynamics in a variety of semiconductor nanostructures including InGaAs quantum dot chains and wires, GaAs nanowires, and Si nanoclusters embedded in glass.

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Bibliographic Details
Main Authors: Cooke, D.G., MacDonald, A.N., Hryciw, A., Meldrum, A., Hegmann, F.A., Mazur, Yu.I., Wen, H., Ma, W.Q., Wang, X., Wang, Z.M., Salamo, G.J., Xiao, M., Mishima, T.D., Lian, G.D., Keay, J., Johnson, M.B., Wang, J., Li, Q., Wu, Z.H., DeSouza, C., Ruda, H.E.
Format: Conference Proceeding
Language:English
Subjects:
Gallium arsenide
Indium gallium arsenide
Nanowires
Optical pumping
Physics
Probes
Pulse measurements
Quantum dots
Semiconductor nanostructures
Wires
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Description
Summary:We use time-resolved terahertz spectroscopy to probe ultrafast carrier dynamics in a variety of semiconductor nanostructures including InGaAs quantum dot chains and wires, GaAs nanowires, and Si nanoclusters embedded in glass.
ISSN:1092-8081
2766-1733
DOI:10.1109/LEOS.2005.1547970