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Nanoscale selective area epitaxy: towards lithographically defined quantum dots at 1.5 /spl mu/m using direct lithographic patterning
InP/InGaAs/InP heterostructures were selectively grown in an array of 60 nm holes on a 90 nm pitch by MOCVD. The pattern was defined photolithographically directly in hydrogen silsesquioxane, a spin-on-glass, obviating the need for pattern transfer processes.
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| Language: | English |
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| creator | Swint, R.B. Juodawlkis, P.W. Oakley, D.C. Napoleone, A. Vineis, C.J. Chludzinski, J.W. Turner, G.W. Twichell, J.C. Bloomstein, T.M. Cann, S.G. Efremow, N.N. Hardy, D.E. Marchant, M.F. Rothschild, M. |
| description | InP/InGaAs/InP heterostructures were selectively grown in an array of 60 nm holes on a 90 nm pitch by MOCVD. The pattern was defined photolithographically directly in hydrogen silsesquioxane, a spin-on-glass, obviating the need for pattern transfer processes. |
| doi_str_mv | 10.1109/LEOS.2005.1548307 |
| format | conference_proceeding |
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The pattern was defined photolithographically directly in hydrogen silsesquioxane, a spin-on-glass, obviating the need for pattern transfer processes.</description><subject>Crystallography</subject><subject>Epitaxial growth</subject><subject>Hydrogen</subject><subject>Indium gallium arsenide</subject><subject>Indium phosphide</subject><subject>Interference</subject><subject>Lithography</subject><subject>MOCVD</subject><subject>Quantum dots</subject><subject>Resists</subject><issn>1092-8081</issn><issn>2766-1733</issn><isbn>0780392175</isbn><isbn>9780780392175</isbn><fulltext>true</fulltext><rsrctype>conference_proceeding</rsrctype><creationdate>2005</creationdate><recordtype>conference_proceeding</recordtype><sourceid>6IE</sourceid><recordid>eNp9j71OwzAUhS1-JFLgARDLfYEk1w6pU1ZU1AHB0O7VVXPbGjmOsR0gD8B7k6ELC9MZvnM-6QhxJ7GQEhfly_JtXSjEupD1Q1OhPhOZ0vN5LnVVnYsZ6garhZK6vhDZNFB5g428ErMY3xEVKq0z8fNKro87sgyRLe-S-WSgwATsTaLv8RFS_0WhjWBNOvaHQP5opr4doeW9cdzCx0AuDR20fYpACWRRQxm9hW4oOxiicQdoTZjkfxzgKSUObsI34nJPNvLtKa_F_fNy87TKDTNvfTAdhXF7uln9T38BEypV3A</recordid><startdate>2005</startdate><enddate>2005</enddate><creator>Swint, R.B.</creator><creator>Juodawlkis, P.W.</creator><creator>Oakley, D.C.</creator><creator>Napoleone, A.</creator><creator>Vineis, C.J.</creator><creator>Chludzinski, J.W.</creator><creator>Turner, G.W.</creator><creator>Twichell, J.C.</creator><creator>Bloomstein, T.M.</creator><creator>Cann, S.G.</creator><creator>Efremow, N.N.</creator><creator>Hardy, D.E.</creator><creator>Marchant, M.F.</creator><creator>Rothschild, M.</creator><general>IEEE</general><scope>6IE</scope><scope>6IH</scope><scope>CBEJK</scope><scope>RIE</scope><scope>RIO</scope></search><sort><creationdate>2005</creationdate><title>Nanoscale selective area epitaxy: towards lithographically defined quantum dots at 1.5 /spl mu/m using direct lithographic patterning</title><author>Swint, R.B. ; Juodawlkis, P.W. ; Oakley, D.C. ; Napoleone, A. ; Vineis, C.J. ; Chludzinski, J.W. ; Turner, G.W. ; Twichell, J.C. ; Bloomstein, T.M. ; Cann, S.G. ; Efremow, N.N. ; Hardy, D.E. ; Marchant, M.F. ; Rothschild, M.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-ieee_primary_15483073</frbrgroupid><rsrctype>conference_proceedings</rsrctype><prefilter>conference_proceedings</prefilter><language>eng</language><creationdate>2005</creationdate><topic>Crystallography</topic><topic>Epitaxial growth</topic><topic>Hydrogen</topic><topic>Indium gallium arsenide</topic><topic>Indium phosphide</topic><topic>Interference</topic><topic>Lithography</topic><topic>MOCVD</topic><topic>Quantum dots</topic><topic>Resists</topic><toplevel>online_resources</toplevel><creatorcontrib>Swint, R.B.</creatorcontrib><creatorcontrib>Juodawlkis, P.W.</creatorcontrib><creatorcontrib>Oakley, D.C.</creatorcontrib><creatorcontrib>Napoleone, A.</creatorcontrib><creatorcontrib>Vineis, C.J.</creatorcontrib><creatorcontrib>Chludzinski, J.W.</creatorcontrib><creatorcontrib>Turner, G.W.</creatorcontrib><creatorcontrib>Twichell, J.C.</creatorcontrib><creatorcontrib>Bloomstein, T.M.</creatorcontrib><creatorcontrib>Cann, S.G.</creatorcontrib><creatorcontrib>Efremow, N.N.</creatorcontrib><creatorcontrib>Hardy, D.E.</creatorcontrib><creatorcontrib>Marchant, M.F.</creatorcontrib><creatorcontrib>Rothschild, M.</creatorcontrib><collection>IEEE Electronic Library (IEL) Conference Proceedings</collection><collection>IEEE Proceedings Order Plan (POP) 1998-present by volume</collection><collection>IEEE Xplore All Conference Proceedings</collection><collection>IEEE Xplore</collection><collection>IEEE Proceedings Order Plans (POP) 1998-present</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Swint, R.B.</au><au>Juodawlkis, P.W.</au><au>Oakley, D.C.</au><au>Napoleone, A.</au><au>Vineis, C.J.</au><au>Chludzinski, J.W.</au><au>Turner, G.W.</au><au>Twichell, J.C.</au><au>Bloomstein, T.M.</au><au>Cann, S.G.</au><au>Efremow, N.N.</au><au>Hardy, D.E.</au><au>Marchant, M.F.</au><au>Rothschild, M.</au><format>book</format><genre>proceeding</genre><ristype>CONF</ristype><atitle>Nanoscale selective area epitaxy: towards lithographically defined quantum dots at 1.5 /spl mu/m using direct lithographic patterning</atitle><btitle>2005 IEEE LEOS Annual Meeting Conference Proceedings</btitle><stitle>LEOS</stitle><date>2005</date><risdate>2005</risdate><spage>913</spage><epage>914</epage><pages>913-914</pages><issn>1092-8081</issn><eissn>2766-1733</eissn><isbn>0780392175</isbn><isbn>9780780392175</isbn><abstract>InP/InGaAs/InP heterostructures were selectively grown in an array of 60 nm holes on a 90 nm pitch by MOCVD. The pattern was defined photolithographically directly in hydrogen silsesquioxane, a spin-on-glass, obviating the need for pattern transfer processes.</abstract><pub>IEEE</pub><doi>10.1109/LEOS.2005.1548307</doi></addata></record> |
| fulltext | fulltext_linktorsrc |
| identifier | ISSN: 1092-8081 |
| ispartof | 2005 IEEE LEOS Annual Meeting Conference Proceedings, 2005, p.913-914 |
| issn | 1092-8081 2766-1733 |
| language | eng |
| recordid | cdi_ieee_primary_1548307 |
| source | IEEE Electronic Library (IEL) Conference Proceedings |
| subjects | Crystallography Epitaxial growth Hydrogen Indium gallium arsenide Indium phosphide Interference Lithography MOCVD Quantum dots Resists |
| title | Nanoscale selective area epitaxy: towards lithographically defined quantum dots at 1.5 /spl mu/m using direct lithographic patterning |
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