Advances in hyperspeed digital interconnects using electromagnetic bandgap technology: measured low-loss 43-GHz passband centered at 50 GHz

We have performed a computational and experimental study of a promising new wireless interconnect for high-speed digital circuits employing linear defects in electromagnetic bandgap structures at 50 GHz center frequency. Our recent results confirm the scalability of this technology. We found that em...

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Bibliographic Details
Main Authors: Simpson, J.J., Taflove, A., Mix, J.A., Heck, H.
Format: Conference Proceeding
Language:English
Subjects:
Dielectrics
Digital circuits
Electromagnetic measurements
Frequency
High performance computing
Integrated circuit interconnections
Millimeter wave technology
Passband
Periodic structures
Scalability
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Summary:We have performed a computational and experimental study of a promising new wireless interconnect for high-speed digital circuits employing linear defects in electromagnetic bandgap structures at 50 GHz center frequency. Our recent results confirm the scalability of this technology. We found that employing low-loss dielectrics can maintain the approximately 80% bandwidth with excellent stopband, gain flatness, and matching characteristics previously observed at 10 GHz. When further scaled to millimeter-wave center frequencies above 300 GHz (to leverage emerging silicon transistor technology), EBG wireless interconnects should be able to support data rates in the hundreds of Gbit/s, assuming the availability of suitable low-loss dielectrics.
ISSN:1522-3965
1947-1491
DOI:10.1109/APS.2005.1552164