A novel tunable wet etched mid-IR pentenary AIInGaAsSb junction laser at 2.34-2.44 /spl mu/m

A new design for tunable mid-IR lasers is proposed and demonstrated. The design involves a new quantum well structure with AlInGaAsSb barriers and InGaAsSb wells, a new rapid thermal annealing (RTA) processing step and a new design for a wet etched waveguide junction

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Bibliographic Details
Main Authors: Bugge, R., Fimland, B.
Format: Conference Proceeding
Language:English
Subjects:
Distributed feedback devices
Gas lasers
Laser feedback
Laser modes
Optical design
Testing
Tunable circuits and devices
Waveguide junctions
Waveguide lasers
Wet etching
Online Access:Request full text
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Description
Summary:A new design for tunable mid-IR lasers is proposed and demonstrated. The design involves a new quantum well structure with AlInGaAsSb barriers and InGaAsSb wells, a new rapid thermal annealing (RTA) processing step and a new design for a wet etched waveguide junction
ISSN:1548-3770
2640-6853
DOI:10.1109/DRC.2005.1553035