Dielectric properties of boron nitride after high-temperature implantation with ions

• Main Authors: Kabvshev, A.V., Konusov, F.V., Lopatin, V.V., Krivosheeva, N.V.
• Format: Conference Proceeding
• Language: English
• Subjects: Annealing; Boron; Conductivity; Dielectric materials; Heat treatment; Heating; Stability; Surface treatment; Temperature dependence; Voltage
• DOI: 10.1109/KORUS.2004.1555693

Ion-heat modification in different regimes allow to adjust the surface resistivity /spl rho//sub s/ of inorganic dielectrics from 10/sup 15/ to 10/sup 3/ /spl Omega//. The surface property changes depend on annealing temperature T/sub an/ and irradiation temperature T/sub i/. The energetic characteristics of conduction /spl sigma//sub s/ and its stability in oxygen-contained media after irradiation of boron nitride (/spl theta/=(1-2)/spl middot/10/sup 17/ C/sup +//cm/sup 2/, T/sub i/=300-1200 K) and subsequent annealing (P /spl les/10 P/sub a/, T/sub an/ = 300-2000 K) were investigated. The T/sub i/ growth enlarge /spl rho//sub s/(T) and change energetic parameters owing to coexistence processes of defect accumulation, annealing and complexes reconfiguration too. Influence of these processes on dielectric properties become apparent after post-implantation annealing. The stable properties are formed after T/sub i/< 1000 K, T/sub an/ = 900-1200 K and/or T/sub i/>500 K, T/sub an/ = 1700-1750 K. Electron transport dominate at /spl sigma//sub s//spl ges/10/sup 9/ S/. However Fermi level shift develop to conduction band less compare with T/sub i/1200 K. The feature of high-temperature implantation has lower sensibility of surface to the influence of oxygen-contained reagents owing to the formation of stable defects.