AlGaAs/GaAs HBT for high-temperature applications

A high-temperature N-p-n AlGaAs/GaAs HBT with a wide-bandgap emitter which can be operated up to a ambient temperature of 350 degrees C is presented. It is demonstrated that a high Al mole fraction of 0.45 in the emitter in combination with a GaAs base layer yields excellent temperature stability. A...

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Bibliographic Details
Published in:IEEE transactions on electron devices 1992-09, Vol.39 (9), p.1977-1981
Main Authors: Fricke, K., Hartnagel, H.L., Lee, W.-Y., Wurfl, J.
Format: Article
Language:English
Subjects:
Applied sciences
Artificial intelligence
Current measurement
Electronics
Exact sciences and technology
Gain measurement
Gallium arsenide
Heterojunction bipolar transistors
Operational amplifiers
Photonic band gap
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Stability
Temperature distribution
Temperature sensors
Transistors
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Summary:A high-temperature N-p-n AlGaAs/GaAs HBT with a wide-bandgap emitter which can be operated up to a ambient temperature of 350 degrees C is presented. It is demonstrated that a high Al mole fraction of 0.45 in the emitter in combination with a GaAs base layer yields excellent temperature stability. A useful common-emitter small-signal current gain h/sub FE/ higher than 35 was measured in the range between room temperature and 350 degrees C.< >
ISSN:0018-9383
1557-9646
DOI:10.1109/16.155867