Calibrated Mobility Corrections for Drift Diffusion Simulation of Strained MOSFET Devices

In this paper, simple corrections to traditional Drift-Diffusion mobility models are derived from strained full-band Monte Carlo simulations in order to correctly account for strain effects. The validity of this approach is benchmarked upon Monte Carlo MOSFET simulations as well as experimental data...

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Bibliographic Details
Main Authors: Villanueva, D., Dray, A., Orain, V.S., Fiori, C., Ortolland, E., Fuchs, E., Salvetti, F., Juge, A.
Format: Conference Proceeding
Language:English
Subjects:
Capacitive sensors
Compressive stress
Doping
Monte Carlo methods
MOSFET circuits
Region 1
Scattering
Semiconductor films
Silicon
Tensile stress
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Summary:In this paper, simple corrections to traditional Drift-Diffusion mobility models are derived from strained full-band Monte Carlo simulations in order to correctly account for strain effects. The validity of this approach is benchmarked upon Monte Carlo MOSFET simulations as well as experimental data featuring tensile nitride capping layers.
ISSN:1946-1569
1946-1577
DOI:10.1109/SISPAD.2005.201537