Wunsch-Bell criterion dependency for silicon FET

The results of electrothermal process calculations in FET are given. Calculations performed in avalanche breakdown mode till Au (used as gate substrate) melting point and achieved in any lattice point in active FET area. Discrete FET model is used to perform calculations

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Bibliographic Details
Main Authors: Gordienko, Yu.E., Zuev, S.A., Starostenko, V.V., Tereshchenko, V.Yu, Shadrin, A.A., Osadchuk, A.E.
Format: Conference Proceeding
Language:English
Subjects:
EMP radiation effects
FETs
IEEE catalog
Microwave technology
Organizing
Semiconductor devices
Semiconductor diodes
Solid state circuits
Threshold voltage
Topology
Online Access:Request full text
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Description
Summary:The results of electrothermal process calculations in FET are given. Calculations performed in avalanche breakdown mode till Au (used as gate substrate) melting point and achieved in any lattice point in active FET area. Discrete FET model is used to perform calculations
DOI:10.1109/CRMICO.2005.1565098