Structural and optical studies of In(Ga)P nanowires grown on Si(111) substrates by MOCVD

We demonstrated the synthesis of In(Ga)P nanowires on silicon using MOCVD at temperatures 350/spl sim/430 /spl deg/C. PL studies on the In(Ga)P nanowires indicate their tenability of optical properties in spite of a large lattice mismatch 8.07%.

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Bibliographic Details
Main Authors: Chuang, L.C., Kobayashi, N.P., Eui-Tae Kim, Chang-Hasnain, C., Kuykendall, T., Sirbuly, D., Yang, P.
Format: Conference Proceeding
Language:English
Subjects:
III-V semiconductor materials
Indium phosphide
Lattices
Light emitting diodes
MOCVD
Nanowires
Semiconductor nanostructures
Silicon
Substrates
Temperature distribution
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Description
Summary:We demonstrated the synthesis of In(Ga)P nanowires on silicon using MOCVD at temperatures 350/spl sim/430 /spl deg/C. PL studies on the In(Ga)P nanowires indicate their tenability of optical properties in spite of a large lattice mismatch 8.07%.
DOI:10.1109/CLEO.2005.202395