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Probing the Indium Nitride Lattice Locally with the Radioisotope Probe /sup 111/ In/Cd
The lattice structure of both InN grains with submicron dimensions and a MBE-grown InN film have been studied with the radioisotope probe 111 In/Cd and perturbed angular correlation spectroscopy. The quadrupole interaction frequency of the probe in this material has been measured to be of the order...
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creator | Timmers, H. Dogra, R. Shrestha, S.K. Edge, A.V.J. Byrne, A.P. |
description | The lattice structure of both InN grains with submicron dimensions and a MBE-grown InN film have been studied with the radioisotope probe 111 In/Cd and perturbed angular correlation spectroscopy. The quadrupole interaction frequency of the probe in this material has been measured to be of the order of 28 MHz, consistent with results for AlN and GaN. Strong damping of the signal indicates that InN has a highly defective lattice with diverse defect structures, which are not cured by annealing in the accessible temperature range |
doi_str_mv | 10.1109/COMMAD.2004.1577481 |
format | conference_proceeding |
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The quadrupole interaction frequency of the probe in this material has been measured to be of the order of 28 MHz, consistent with results for AlN and GaN. Strong damping of the signal indicates that InN has a highly defective lattice with diverse defect structures, which are not cured by annealing in the accessible temperature range</description><identifier>ISBN: 0780388208</identifier><identifier>ISBN: 9780780388208</identifier><identifier>DOI: 10.1109/COMMAD.2004.1577481</identifier><language>eng</language><publisher>IEEE</publisher><subject>Annealing ; Damping ; Frequency measurement ; Gallium nitride ; Indium ; Lattices ; Molecular beam epitaxial growth ; Probes ; Radioactive materials ; Spectroscopy</subject><ispartof>Conference on Optoelectronic and Microelectronic Materials and Devices, 2004, 2004, p.17-20</ispartof><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://ieeexplore.ieee.org/document/1577481$$EHTML$$P50$$Gieee$$H</linktohtml><link.rule.ids>309,310,777,781,786,787,2052,4036,4037,27906,54901</link.rule.ids><linktorsrc>$$Uhttps://ieeexplore.ieee.org/document/1577481$$EView_record_in_IEEE$$FView_record_in_$$GIEEE</linktorsrc></links><search><creatorcontrib>Timmers, H.</creatorcontrib><creatorcontrib>Dogra, R.</creatorcontrib><creatorcontrib>Shrestha, S.K.</creatorcontrib><creatorcontrib>Edge, A.V.J.</creatorcontrib><creatorcontrib>Byrne, A.P.</creatorcontrib><title>Probing the Indium Nitride Lattice Locally with the Radioisotope Probe /sup 111/ In/Cd</title><title>Conference on Optoelectronic and Microelectronic Materials and Devices, 2004</title><addtitle>COMMAD</addtitle><description>The lattice structure of both InN grains with submicron dimensions and a MBE-grown InN film have been studied with the radioisotope probe 111 In/Cd and perturbed angular correlation spectroscopy. The quadrupole interaction frequency of the probe in this material has been measured to be of the order of 28 MHz, consistent with results for AlN and GaN. Strong damping of the signal indicates that InN has a highly defective lattice with diverse defect structures, which are not cured by annealing in the accessible temperature range</description><subject>Annealing</subject><subject>Damping</subject><subject>Frequency measurement</subject><subject>Gallium nitride</subject><subject>Indium</subject><subject>Lattices</subject><subject>Molecular beam epitaxial growth</subject><subject>Probes</subject><subject>Radioactive materials</subject><subject>Spectroscopy</subject><isbn>0780388208</isbn><isbn>9780780388208</isbn><fulltext>true</fulltext><rsrctype>conference_proceeding</rsrctype><creationdate>2004</creationdate><recordtype>conference_proceeding</recordtype><sourceid>6IE</sourceid><recordid>eNp9jssKwjAURAMi-OoXdJMfsMmtLY1LqYqCL0TcSmyiXmmb0kTEv7eKa2dzFjMchhAfeADAxyzdrteTaRByHgUQJ0kkoEV6PBF8JETIRYd41t55kyiOYCy65LirzRnLK3U3TZelwkdBN-hqVJqupHOYNTSZzPMXfaK7fXd7qdCgNc5Umn4EmjL7qCgAsEbCUjUg7YvMrfZ-7BN_PjukiyFqrU9VjYWsX6ffxdH_9g1HMT-O</recordid><startdate>2004</startdate><enddate>2004</enddate><creator>Timmers, H.</creator><creator>Dogra, R.</creator><creator>Shrestha, S.K.</creator><creator>Edge, A.V.J.</creator><creator>Byrne, A.P.</creator><general>IEEE</general><scope>6IE</scope><scope>6IL</scope><scope>CBEJK</scope><scope>RIE</scope><scope>RIL</scope></search><sort><creationdate>2004</creationdate><title>Probing the Indium Nitride Lattice Locally with the Radioisotope Probe /sup 111/ In/Cd</title><author>Timmers, H. ; Dogra, R. ; Shrestha, S.K. ; Edge, A.V.J. ; Byrne, A.P.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-ieee_primary_15774813</frbrgroupid><rsrctype>conference_proceedings</rsrctype><prefilter>conference_proceedings</prefilter><language>eng</language><creationdate>2004</creationdate><topic>Annealing</topic><topic>Damping</topic><topic>Frequency measurement</topic><topic>Gallium nitride</topic><topic>Indium</topic><topic>Lattices</topic><topic>Molecular beam epitaxial growth</topic><topic>Probes</topic><topic>Radioactive materials</topic><topic>Spectroscopy</topic><toplevel>online_resources</toplevel><creatorcontrib>Timmers, H.</creatorcontrib><creatorcontrib>Dogra, R.</creatorcontrib><creatorcontrib>Shrestha, S.K.</creatorcontrib><creatorcontrib>Edge, A.V.J.</creatorcontrib><creatorcontrib>Byrne, A.P.</creatorcontrib><collection>IEEE Electronic Library (IEL) Conference Proceedings</collection><collection>IEEE Proceedings Order Plan All Online (POP All Online) 1998-present by volume</collection><collection>IEEE Xplore All Conference Proceedings</collection><collection>IEEE/IET Electronic Library (IEL)</collection><collection>IEEE Proceedings Order Plans (POP All) 1998-Present</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Timmers, H.</au><au>Dogra, R.</au><au>Shrestha, S.K.</au><au>Edge, A.V.J.</au><au>Byrne, A.P.</au><format>book</format><genre>proceeding</genre><ristype>CONF</ristype><atitle>Probing the Indium Nitride Lattice Locally with the Radioisotope Probe /sup 111/ In/Cd</atitle><btitle>Conference on Optoelectronic and Microelectronic Materials and Devices, 2004</btitle><stitle>COMMAD</stitle><date>2004</date><risdate>2004</risdate><spage>17</spage><epage>20</epage><pages>17-20</pages><isbn>0780388208</isbn><isbn>9780780388208</isbn><abstract>The lattice structure of both InN grains with submicron dimensions and a MBE-grown InN film have been studied with the radioisotope probe 111 In/Cd and perturbed angular correlation spectroscopy. The quadrupole interaction frequency of the probe in this material has been measured to be of the order of 28 MHz, consistent with results for AlN and GaN. Strong damping of the signal indicates that InN has a highly defective lattice with diverse defect structures, which are not cured by annealing in the accessible temperature range</abstract><pub>IEEE</pub><doi>10.1109/COMMAD.2004.1577481</doi></addata></record> |
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subjects | Annealing Damping Frequency measurement Gallium nitride Indium Lattices Molecular beam epitaxial growth Probes Radioactive materials Spectroscopy |
title | Probing the Indium Nitride Lattice Locally with the Radioisotope Probe /sup 111/ In/Cd |
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