A RF lateral BJT on SOI for realization of RF SOI-BiCMOS technology

This work presents a lateral RF BJT built on SOI-CMOS compatible substrate. The primary motivation is to realize a SOI-BiCMOS technology suitable for low power RF and mixed-signal SoC. This novel LBJT structure relies on a self-aligned polysilicon side-wall-spacer (PSWS) to connect the base contact...

Full description

Saved in:
Bibliographic Details
Main Authors: Sun, I.-S.M., Wai Tung Ng, Mochizuki, H., Kanekiyo, K., Kobayashi, T., Toita, M., Imai, H., Ishikawa, A., Tamura, S., Takasuka, K.
Format: Conference Proceeding
Language:English
Subjects:
CMOS technology
Current density
Energy consumption
Isolation technology
Radio frequency
Silicon carbide
Silicon on insulator technology
Substrates
Thin film circuits
Transistors
Online Access:Request full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:This work presents a lateral RF BJT built on SOI-CMOS compatible substrate. The primary motivation is to realize a SOI-BiCMOS technology suitable for low power RF and mixed-signal SoC. This novel LBJT structure relies on a self-aligned polysilicon side-wall-spacer (PSWS) to connect the base contact to the intrinsic base with dimensions in 100 nm range. The fabricated LBJTs exhibit superior Johnson's product (f/sub /spl tau///spl times/BV/sub CEO/) in the range between 190-300 GHz/spl middot/V. The f/sub max/ of the optimal device reaches 46 GHz at collector current density of only 0.15 mA//spl mu/m/sup 2/. Both figure-of-merits are in-line with advanced SiGe-HBT devices, and superior than previously published data on lateral BJTs.
DOI:10.1109/SMIC.2005.1587902