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Statistical characterization and Monte-Carlo simulation of low-frequency noise variations in foundry AMS/RF CMOS technology
Statistical characterization of low-frequency noise enables the prediction of 1/f noise with dispersions. The impact of downscaling on the low-frequency noise performance of foundry AMS/RF CMOS technology is thus evaluated. Meanwhile, a novel modeling approach uses Monte-Carlo simulation is develope...
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Main Authors: | , , , , |
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Format: | Conference Proceeding |
Language: | English |
Subjects: | |
Online Access: | Request full text |
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Summary: | Statistical characterization of low-frequency noise enables the prediction of 1/f noise with dispersions. The impact of downscaling on the low-frequency noise performance of foundry AMS/RF CMOS technology is thus evaluated. Meanwhile, a novel modeling approach uses Monte-Carlo simulation is developed which includes statistical variations of individual device to capture the fluctuations in frequency and amplitude of the low-frequency noise of deep-sub-micrometer CMOS |
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DOI: | 10.1109/SMIC.2005.1587980 |