Low-voltage bandgap reference design utilizing Schottky diodes

As semiconductor device geometries continue to shrink, the corresponding voltage applied across the processed devices must also be reduced. Therefore reference voltages used in integrated circuits will need to be reduced as well. A typical bandgap reference (BGR) voltage generator uses PN junction d...

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Bibliographic Details
Main Authors: Butler, D.L., Baker, R.J.
Format: Conference Proceeding
Language:English
Subjects:
Circuit simulation
Circuit synthesis
Fabrication
Low voltage
Photonic band gap
Process design
Schottky diodes
Semiconductor device modeling
Semiconductor diodes
Temperature
Online Access:Request full text
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Summary:As semiconductor device geometries continue to shrink, the corresponding voltage applied across the processed devices must also be reduced. Therefore reference voltages used in integrated circuits will need to be reduced as well. A typical bandgap reference (BGR) voltage generator uses PN junction diodes or PNP BJT's to bias the reference. The forward bias voltage of these devices is typically 0.7 volts, and has a limiting effect on how low a reference voltage can be generated, as well as how low a system voltage can be applied. Schottky, or metal-semiconductor (MS), diodes have a lower forward bias voltage, typically of about 0.3 volts. The implementation of Schottky metal-semiconductor diodes in place of PN diodes in the design of the BGR, should allow for lower reference voltage generation. This project consists of the design and simulation of a BGR utilizing MS diodes, followed by fabrication and validation of the design
ISSN:1548-3746
1558-3899
DOI:10.1109/MWSCAS.2005.1594470