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Cell Library Development Methodology for Throughput Enhancement of Electron Beam Direct-Write Lithography Systems

We propose a cell library development methodology for throughput enhancement of electron beam direct-write (EBDW) systems. First, an ILP (integer linear programming)-based cell selection is proposed for EBDW systems in which both of the character projection (CP) and the variable shaped beam (VSB) me...

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Main Authors:	Sugihara, M., Takata, T., Nakamura, K., Inanami, R., Hayashi, H., Kishimoto, K., Hasebe, T., Kawano, Y., Matsunaga, Y., Murakami, K., Okumura, K.
Format:	Conference Proceeding
Language:	English
Subjects:	Apertures Delay effects Electron beams Electronics industry Libraries Lithography Production Semiconductor devices Shape Throughput
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creator	Sugihara, M. Takata, T. Nakamura, K. Inanami, R. Hayashi, H. Kishimoto, K. Hasebe, T. Kawano, Y. Matsunaga, Y. Murakami, K. Okumura, K.
description	We propose a cell library development methodology for throughput enhancement of electron beam direct-write (EBDW) systems. First, an ILP (integer linear programming)-based cell selection is proposed for EBDW systems in which both of the character projection (CP) and the variable shaped beam (VSB) methods are available, in order to minimize the number of electron beam (EB) shots, that is, time to fabricate chips. Secondly, the influence of cell directions on area and delay time of chips is examined. The examination helps to reduce the number of EB shots with a little deterioration of area and delay time because unnecessary directions of cells can be removed to increase the number of cells on a CP aperture mask. Finally, a case study is shown in which the numbers of EB shots are examined under several cases.
doi_str_mv	10.1109/ISSOC.2005.1595663
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fullrecord	<record><control><sourceid>ieee_6IE</sourceid><recordid>TN_cdi_ieee_primary_1595663</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><ieee_id>1595663</ieee_id><sourcerecordid>1595663</sourcerecordid><originalsourceid>FETCH-LOGICAL-i90t-d634f82260417e6e0bc710fcd7e115790341c612fb263cb70c4dbcb8d9616e873</originalsourceid><addsrcrecordid>eNotkN1KxDAUhAMiqOu-gN7kBVpPmjZpLrW76kJlL1rwcmnT0x9pm5pmhb69RXcYOAwMH5wh5IGBzxiop0OWHRM_AIh8FqlICH5F7kDGwFWgQnVDtvP8Bau4EqtvyXeCfU_TrrSFXegOf7A304Cjox_oWlOZ3jQLrY2leWvNuWmns6P7sS1GjX81U9N9j9pZM9IXLAa66-wavU_bOVzBK6SxxdQuNFtmh8N8T67rop9xe7kbkr_u8-TdS49vh-Q59ToFzqsED-s4CASETKJAKLVkUOtKImORVMBDpgUL6jIQXJcSdFiVuowrJZjAWPINefzHdoh4mmw3rA-eLqPwXy54Wfs</addsrcrecordid><sourcetype>Publisher</sourcetype><iscdi>true</iscdi><recordtype>conference_proceeding</recordtype></control><display><type>conference_proceeding</type><title>Cell Library Development Methodology for Throughput Enhancement of Electron Beam Direct-Write Lithography Systems</title><source>IEEE Electronic Library (IEL) Conference Proceedings</source><creator>Sugihara, M. ; Takata, T. ; Nakamura, K. ; Inanami, R. ; Hayashi, H. ; Kishimoto, K. ; Hasebe, T. ; Kawano, Y. ; Matsunaga, Y. ; Murakami, K. ; Okumura, K.</creator><creatorcontrib>Sugihara, M. ; Takata, T. ; Nakamura, K. ; Inanami, R. ; Hayashi, H. ; Kishimoto, K. ; Hasebe, T. ; Kawano, Y. ; Matsunaga, Y. ; Murakami, K. ; Okumura, K.</creatorcontrib><description>We propose a cell library development methodology for throughput enhancement of electron beam direct-write (EBDW) systems. First, an ILP (integer linear programming)-based cell selection is proposed for EBDW systems in which both of the character projection (CP) and the variable shaped beam (VSB) methods are available, in order to minimize the number of electron beam (EB) shots, that is, time to fabricate chips. Secondly, the influence of cell directions on area and delay time of chips is examined. The examination helps to reduce the number of EB shots with a little deterioration of area and delay time because unnecessary directions of cells can be removed to increase the number of cells on a CP aperture mask. Finally, a case study is shown in which the numbers of EB shots are examined under several cases.</description><identifier>ISBN: 0780392949</identifier><identifier>ISBN: 9780780392946</identifier><identifier>DOI: 10.1109/ISSOC.2005.1595663</identifier><language>eng</language><publisher>IEEE</publisher><subject>Apertures ; Delay effects ; Electron beams ; Electronics industry ; Libraries ; Lithography ; Production ; Semiconductor devices ; Shape ; Throughput</subject><ispartof>2005 International Symposium on System-on-Chip, 2005, p.137-140</ispartof><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://ieeexplore.ieee.org/document/1595663$$EHTML$$P50$$Gieee$$H</linktohtml><link.rule.ids>309,310,776,780,785,786,2051,4035,4036,27904,54899</link.rule.ids><linktorsrc>$$Uhttps://ieeexplore.ieee.org/document/1595663$$EView_record_in_IEEE$$FView_record_in_$$GIEEE</linktorsrc></links><search><creatorcontrib>Sugihara, M.</creatorcontrib><creatorcontrib>Takata, T.</creatorcontrib><creatorcontrib>Nakamura, K.</creatorcontrib><creatorcontrib>Inanami, R.</creatorcontrib><creatorcontrib>Hayashi, H.</creatorcontrib><creatorcontrib>Kishimoto, K.</creatorcontrib><creatorcontrib>Hasebe, T.</creatorcontrib><creatorcontrib>Kawano, Y.</creatorcontrib><creatorcontrib>Matsunaga, Y.</creatorcontrib><creatorcontrib>Murakami, K.</creatorcontrib><creatorcontrib>Okumura, K.</creatorcontrib><title>Cell Library Development Methodology for Throughput Enhancement of Electron Beam Direct-Write Lithography Systems</title><title>2005 International Symposium on System-on-Chip</title><addtitle>ISSOC</addtitle><description>We propose a cell library development methodology for throughput enhancement of electron beam direct-write (EBDW) systems. First, an ILP (integer linear programming)-based cell selection is proposed for EBDW systems in which both of the character projection (CP) and the variable shaped beam (VSB) methods are available, in order to minimize the number of electron beam (EB) shots, that is, time to fabricate chips. Secondly, the influence of cell directions on area and delay time of chips is examined. The examination helps to reduce the number of EB shots with a little deterioration of area and delay time because unnecessary directions of cells can be removed to increase the number of cells on a CP aperture mask. Finally, a case study is shown in which the numbers of EB shots are examined under several cases.</description><subject>Apertures</subject><subject>Delay effects</subject><subject>Electron beams</subject><subject>Electronics industry</subject><subject>Libraries</subject><subject>Lithography</subject><subject>Production</subject><subject>Semiconductor devices</subject><subject>Shape</subject><subject>Throughput</subject><isbn>0780392949</isbn><isbn>9780780392946</isbn><fulltext>true</fulltext><rsrctype>conference_proceeding</rsrctype><creationdate>2005</creationdate><recordtype>conference_proceeding</recordtype><sourceid>6IE</sourceid><recordid>eNotkN1KxDAUhAMiqOu-gN7kBVpPmjZpLrW76kJlL1rwcmnT0x9pm5pmhb69RXcYOAwMH5wh5IGBzxiop0OWHRM_AIh8FqlICH5F7kDGwFWgQnVDtvP8Bau4EqtvyXeCfU_TrrSFXegOf7A304Cjox_oWlOZ3jQLrY2leWvNuWmns6P7sS1GjX81U9N9j9pZM9IXLAa66-wavU_bOVzBK6SxxdQuNFtmh8N8T67rop9xe7kbkr_u8-TdS49vh-Q59ToFzqsED-s4CASETKJAKLVkUOtKImORVMBDpgUL6jIQXJcSdFiVuowrJZjAWPINefzHdoh4mmw3rA-eLqPwXy54Wfs</recordid><startdate>2005</startdate><enddate>2005</enddate><creator>Sugihara, M.</creator><creator>Takata, T.</creator><creator>Nakamura, K.</creator><creator>Inanami, R.</creator><creator>Hayashi, H.</creator><creator>Kishimoto, K.</creator><creator>Hasebe, T.</creator><creator>Kawano, Y.</creator><creator>Matsunaga, Y.</creator><creator>Murakami, K.</creator><creator>Okumura, K.</creator><general>IEEE</general><scope>6IE</scope><scope>6IL</scope><scope>CBEJK</scope><scope>RIE</scope><scope>RIL</scope></search><sort><creationdate>2005</creationdate><title>Cell Library Development Methodology for Throughput Enhancement of Electron Beam Direct-Write Lithography Systems</title><author>Sugihara, M. ; Takata, T. ; Nakamura, K. ; Inanami, R. ; Hayashi, H. ; Kishimoto, K. ; Hasebe, T. ; Kawano, Y. ; Matsunaga, Y. ; Murakami, K. ; Okumura, K.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-i90t-d634f82260417e6e0bc710fcd7e115790341c612fb263cb70c4dbcb8d9616e873</frbrgroupid><rsrctype>conference_proceedings</rsrctype><prefilter>conference_proceedings</prefilter><language>eng</language><creationdate>2005</creationdate><topic>Apertures</topic><topic>Delay effects</topic><topic>Electron beams</topic><topic>Electronics industry</topic><topic>Libraries</topic><topic>Lithography</topic><topic>Production</topic><topic>Semiconductor devices</topic><topic>Shape</topic><topic>Throughput</topic><toplevel>online_resources</toplevel><creatorcontrib>Sugihara, M.</creatorcontrib><creatorcontrib>Takata, T.</creatorcontrib><creatorcontrib>Nakamura, K.</creatorcontrib><creatorcontrib>Inanami, R.</creatorcontrib><creatorcontrib>Hayashi, H.</creatorcontrib><creatorcontrib>Kishimoto, K.</creatorcontrib><creatorcontrib>Hasebe, T.</creatorcontrib><creatorcontrib>Kawano, Y.</creatorcontrib><creatorcontrib>Matsunaga, Y.</creatorcontrib><creatorcontrib>Murakami, K.</creatorcontrib><creatorcontrib>Okumura, K.</creatorcontrib><collection>IEEE Electronic Library (IEL) Conference Proceedings</collection><collection>IEEE Proceedings Order Plan All Online (POP All Online) 1998-present by volume</collection><collection>IEEE Xplore All Conference Proceedings</collection><collection>IEEE Xplore (Online service)</collection><collection>IEEE Proceedings Order Plans (POP All) 1998-Present</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Sugihara, M.</au><au>Takata, T.</au><au>Nakamura, K.</au><au>Inanami, R.</au><au>Hayashi, H.</au><au>Kishimoto, K.</au><au>Hasebe, T.</au><au>Kawano, Y.</au><au>Matsunaga, Y.</au><au>Murakami, K.</au><au>Okumura, K.</au><format>book</format><genre>proceeding</genre><ristype>CONF</ristype><atitle>Cell Library Development Methodology for Throughput Enhancement of Electron Beam Direct-Write Lithography Systems</atitle><btitle>2005 International Symposium on System-on-Chip</btitle><stitle>ISSOC</stitle><date>2005</date><risdate>2005</risdate><spage>137</spage><epage>140</epage><pages>137-140</pages><isbn>0780392949</isbn><isbn>9780780392946</isbn><abstract>We propose a cell library development methodology for throughput enhancement of electron beam direct-write (EBDW) systems. First, an ILP (integer linear programming)-based cell selection is proposed for EBDW systems in which both of the character projection (CP) and the variable shaped beam (VSB) methods are available, in order to minimize the number of electron beam (EB) shots, that is, time to fabricate chips. Secondly, the influence of cell directions on area and delay time of chips is examined. The examination helps to reduce the number of EB shots with a little deterioration of area and delay time because unnecessary directions of cells can be removed to increase the number of cells on a CP aperture mask. Finally, a case study is shown in which the numbers of EB shots are examined under several cases.</abstract><pub>IEEE</pub><doi>10.1109/ISSOC.2005.1595663</doi><tpages>4</tpages></addata></record>
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identifier	ISBN: 0780392949
ispartof	2005 International Symposium on System-on-Chip, 2005, p.137-140
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source	IEEE Electronic Library (IEL) Conference Proceedings
subjects	Apertures Delay effects Electron beams Electronics industry Libraries Lithography Production Semiconductor devices Shape Throughput
title	Cell Library Development Methodology for Throughput Enhancement of Electron Beam Direct-Write Lithography Systems
url	http://sfxeu10.hosted.exlibrisgroup.com/loughborough?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-22T22%3A24%3A21IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-ieee_6IE&rft_val_fmt=info:ofi/fmt:kev:mtx:book&rft.genre=proceeding&rft.atitle=Cell%20Library%20Development%20Methodology%20for%20Throughput%20Enhancement%20of%20Electron%20Beam%20Direct-Write%20Lithography%20Systems&rft.btitle=2005%20International%20Symposium%20on%20System-on-Chip&rft.au=Sugihara,%20M.&rft.date=2005&rft.spage=137&rft.epage=140&rft.pages=137-140&rft.isbn=0780392949&rft.isbn_list=9780780392946&rft_id=info:doi/10.1109/ISSOC.2005.1595663&rft_dat=%3Cieee_6IE%3E1595663%3C/ieee_6IE%3E%3Cgrp_id%3Ecdi_FETCH-LOGICAL-i90t-d634f82260417e6e0bc710fcd7e115790341c612fb263cb70c4dbcb8d9616e873%3C/grp_id%3E%3Coa%3E%3C/oa%3E%3Curl%3E%3C/url%3E&rft_id=info:oai/&rft_id=info:pmid/&rft_ieee_id=1595663&rfr_iscdi=true