A New Gate Dielectric HfLaO with Metal Gate Work Function Tuning Capability and Superior NMOSFETs Performance

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Bibliographic Details
Main Authors: Wang, X.P., Li, M.F., Chin, A., Zhu, C., Ren Chi, Yu, X.F., Shen, C., Du, A.Y., Chan, D.S.H., Dim-Lee Kwong
Format: Conference Proceeding
Language:English
Subjects:
Annealing
Crystallization
Dielectrics
Electron traps
Fabrication
Hafnium compounds
Hafnium oxide
MOSFETs
Temperature
Tuning
Online Access:Request full text
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DOI:10.1109/ISDRS.2005.1596074