The Effects of Implanting Al and Al and C at Different Temperatures in Different Concentrations into SiC

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Bibliographic Details
Main Authors: Stepp, D., Jones, K.A., Zheleva, T.S., Derenge, M.A., Vispute, R.D., Hullavarad, S., Dar, S.
Format: Conference Proceeding
Language:English
Subjects:
Annealing
Conductivity
Electric variables measurement
Implants
Ionization
Physics
Sheet materials
Silicon carbide
Stacking
Temperature distribution
Online Access:Request full text
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DOI:10.1109/ISDRS.2005.1596103