Amorphous Ge bipolar blocking contacts on Ge detectors

The authors report on the performance of high-purity Ge radiation detectors with amorphous Ge (a-Ge) contacts fabricated using RF sputtering techniques. Electrical contacts formed using sputtered a-Ge films on high-purity Ge crystals, both n- and p-type, were found to exhibit good blocking behavior...

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Bibliographic Details
Published in:IEEE Transactions on Nuclear Science (Institute of Electrical and Electronics Engineers); (United States) 1992-08, Vol.39 (4), p.590-594
Main Authors: Luke, P.N., Cork, C.P., Madden, N.W., Rossington, C.S., Wesela, M.F.
Format: Article
Language:English
Subjects:
360601 - Other Materials- Preparation & Manufacture
360606 - Other Materials- Physical Properties- (1992-)
665300 - Interactions Between Beams & Condensed Matter- (1992-)
Amorphous materials
AMORPHOUS STATE
CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY
Contacts
Crystals
CURRENTS
ELECTRIC CONTACTS
ELECTRIC CURRENTS
ELECTRICAL EQUIPMENT
ELEMENTS
Exact sciences and technology
FABRICATION
GE SEMICONDUCTOR DETECTORS
GERMANIUM
HIGH-PURITY GE DETECTORS
Instruments, apparatus, components and techniques common to several branches of physics and astronomy
LEAKAGE CURRENT
MATERIALS
MATERIALS SCIENCE
MEASURING INSTRUMENTS
METALS
N-TYPE CONDUCTORS
Other topics in instruments, apparatus, components and techniques common to several branches of physics and astronomy
P-TYPE CONDUCTORS
Physics
RADIATION DETECTORS
Radio frequency
SCHOTTKY BARRIER DIODES
Schottky barriers
SEMICONDUCTOR DETECTORS
SEMICONDUCTOR DEVICES
SEMICONDUCTOR DIODES
SEMICONDUCTOR MATERIALS
SPUTTERING
THIN FILMS
Voltage
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Summary:The authors report on the performance of high-purity Ge radiation detectors with amorphous Ge (a-Ge) contacts fabricated using RF sputtering techniques. Electrical contacts formed using sputtered a-Ge films on high-purity Ge crystals, both n- and p-type, were found to exhibit good blocking behavior with low leakage currents, with the contact biased under either voltage polarity. The a-Ge contacts have thin dead layers associated with them, and can be used in place of lithium-diffused, ion-implanted, or Schottky barrier contacts on Ge radiation detectors. The use of such contacts allows fabrication of multi-electrode detectors by means of simple processing steps.< >
ISSN:0018-9499
1558-1578
DOI:10.1109/23.159670