A new body-effect elimination technique for ISFET measurement

This paper presents a new circuit technique to reduce the body-effect for more accurate ISFET measurement. In a floating source readout configuration, the most popular n-channel ISFET in a p-type silicon substrate is easily influenced by back gate bias. Based on a proposed bridge-type floating sourc...

Full description

Saved in:
Bibliographic Details
Main Authors: Wen-Yaw Chung, Pijanowska, D.O., Torbicz, W., Chung-Huang Yang, Grabiec, P.B.
Format: Conference Proceeding
Language:English
Subjects:
Biomedical engineering
Biomedical measurements
Biomembranes
Circuits
Cities and towns
FETs
Mirrors
Paper technology
Silicon
Threshold voltage
Online Access:Request full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:This paper presents a new circuit technique to reduce the body-effect for more accurate ISFET measurement. In a floating source readout configuration, the most popular n-channel ISFET in a p-type silicon substrate is easily influenced by back gate bias. Based on a proposed bridge-type floating source circuitry, a current mirror and a MOS drawing the same drain current as the ISFET, the scheme allows reduction of influence of body effect. The proposed technique is simple and has a universal use for different kind of ISFETs
ISSN:1930-0395
2168-9229
DOI:10.1109/ICSENS.2005.1597882