A 2 GHz high isolation DPDT switch MMIC

A double-pole double-throw (DPDT) switch monolithic microwave integrated circuit (MMIC) has been designed to operate from dc to 2 GHz using a commercial 0.18-/spl mu/m GaAs pseudomorphic high electron-mobility transistor (pHEMT) process. The DPDT switch employs four shunt FET blocks to achieve high...

Full description

Saved in:
Bibliographic Details
Main Authors: Ziqiang Yang, Tao Yang, Yu You, Ruimin Xu
Format: Conference Proceeding
Language:English
Subjects:
DPDT
Gallium arsenide
Insertion loss
Microwave FET integrated circuits
Microwave FETs
Microwave integrated circuits
MMIC
MMICs
Monolithic integrated circuits
pHEMT
PHEMTs
switch
Switches
Switching circuits
Online Access:Request full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:A double-pole double-throw (DPDT) switch monolithic microwave integrated circuit (MMIC) has been designed to operate from dc to 2 GHz using a commercial 0.18-/spl mu/m GaAs pseudomorphic high electron-mobility transistor (pHEMT) process. The DPDT switch employs four shunt FET blocks to achieve high isolation. The ON gate bias is set to 0.6 V to reduce the insertion loss. The simulated results of the DPDT switch chip show an insertion loss of less than 0.61 dB and isolation of more than 50 dB up to 2 GHz.
ISSN:2165-4727
2165-4743
DOI:10.1109/APMC.2005.1606503