A thermally-stable sub-0.9nm EOT TaSix/HfSiON gate stack with high electron mobility, suitable for gate-first fabrciation of hp45 LOP devices

We have realized a 0.9nm-EOT TaSix/HfSiON gate stack that exhibits the high electron mobility of 264 cm 2 /Vs @ 0.8MV/cm (86% of thermal SiO 2 ), even after spike annealing at 1000degC. This was achieved by using thermally-stable HfSiON gate dielectrics with plasma nitridation, in which interfacial...

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Bibliographic Details
Main Authors: Inumiya, S., Akasaka, Y., Matsuki, T., Ootsuka, F., Torii, K., Nara, Y.
Format: Conference Proceeding
Language:English
Subjects:
Annealing
Atomic layer deposition
Dielectrics
Electron mobility
Hafnium oxide
Nitrogen
Plasma properties
Plasma temperature
Presence network agents
Semiconductor films
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Summary:We have realized a 0.9nm-EOT TaSix/HfSiON gate stack that exhibits the high electron mobility of 264 cm 2 /Vs @ 0.8MV/cm (86% of thermal SiO 2 ), even after spike annealing at 1000degC. This was achieved by using thermally-stable HfSiON gate dielectrics with plasma nitridation, in which interfacial layer growth due to recoiled oxygen had been successfully suppressed
ISSN:0163-1918
2156-017X
DOI:10.1109/IEDM.2005.1609256