High density silicon nanocrystal embedded in sin prepared by low energy (<500eV) SiH/sub 4/ plasma immersion ion implantation for non-volatile memory applications

We report on the excellent memory properties of silicon nanocrystals (Si-NCs) embedded in SiN. Si-NCs were formed by SiH 4 low-energy plasma immersion ion implantation. Compared with control Si + -implanted sample, additional hydrogen enhanced Si-NC density. By incorporating Si-NCs in SiN, improved...

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Bibliographic Details
Main Authors: Sangmoo Choi, Hyejung Choi, Tae-Wook Kim, Hyundeok Yang, Takhee Lee, Sanghun Jeon, Chungwoo Kim, Hyunsang Hwang
Format: Conference Proceeding
Language:English
Subjects:
Annealing
Atomic force microscopy
Hydrogen
Materials science and technology
MIS devices
Nanocrystals
Nonvolatile memory
Plasma immersion ion implantation
Silicon compounds
Voltage
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Summary:We report on the excellent memory properties of silicon nanocrystals (Si-NCs) embedded in SiN. Si-NCs were formed by SiH 4 low-energy plasma immersion ion implantation. Compared with control Si + -implanted sample, additional hydrogen enhanced Si-NC density. By incorporating Si-NCs in SiN, improved program/erase efficiency, endurance and retention characteristics were observed due to the generation of additional accessible deep charge traps. Using conductive atomic force microscopy and MIS device with gate area of 100 nm, charge trapping/detrapping and multi-level charge storage of single Si-NC at room temperature were observed
ISSN:0163-1918
2156-017X
DOI:10.1109/IEDM.2005.1609296