Thin body silicon-on-insulator N-MOSFET with silicon-carbon source/drain regions for performance enhancement

We report a novel strained n-channel transistor structure featuring silicon-carbon (SiC) source and drain (S/D) regions formed on thin body SOI substrate. The SiC material is pseudomorphically grown by selective epitaxy and the carbon mole fraction incorporated is 1%. Lattice mismatch between SiC an...

Full description

Saved in:
Bibliographic Details
Main Authors: Kah-Wee Ang, King-Jien Chui, Bliznetsov, V., Yihua Wang, Lai Yin Wong, Chih-Hang Tung, Balasubramanian, N., Ming-Fu Li, Ganesh Samudra, Yee-Chia Yeo
Format: Conference Proceeding
Language:English
Subjects:
Electron mobility
Epitaxial growth
Lattices
MOSFET circuits
Organic materials
Scanning electron microscopy
Silicon carbide
Silicon on insulator technology
Substrates
Tensile strain
Online Access:Request full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:We report a novel strained n-channel transistor structure featuring silicon-carbon (SiC) source and drain (S/D) regions formed on thin body SOI substrate. The SiC material is pseudomorphically grown by selective epitaxy and the carbon mole fraction incorporated is 1%. Lattice mismatch between SiC and Si results in uniaxial tensile strain in the Si channel region which contributes favorably to electron mobility enhancement. Drive current I Dsat enhancement of 25% was observed for 90 nm gate length L G transistors, and I Dsat enhancement of up to 35% was observed at L G of 70 nm. In addition, drive current enhancement shows dependence on device width and channel orientation. All transistors were formed on (001) SOI substrates. The largest I Dsat enhancement is observed for transistors with the [010] channel orientation
ISSN:0163-1918
2156-017X
DOI:10.1109/IEDM.2005.1609390