Highly reliable 2-bit/cell nitride trapping flash memory using a novel array-nitride-sealing (ANS) ONO process

For nitride trapping NVM using BTBT-HH erase, hot hole injection generates Si/BOX interface traps that cause subthreshold swing degradation. During data retention time, the annealing of interface traps causes "apparent" program-state V T loss, since passivation of interface traps is indist...

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Bibliographic Details
Main Authors: Yen-Hao Shih, Lee, S.C., Lue, H.T., Wu, M.D., Hsu, T.H., Lai, E.K., Hsieh, J.Y., Wu, C.W., Yang, L.W., Kuang Yeu Hsieh, Chen, K.C., Liu, R., Chih-Yuan Lu
Format: Conference Proceeding
Language:English
Subjects:
Annealing
Degradation
Electron traps
Flash memory
Hot carriers
Hydrogen
Nonvolatile memory
Passivation
Robustness
Stability
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Summary:For nitride trapping NVM using BTBT-HH erase, hot hole injection generates Si/BOX interface traps that cause subthreshold swing degradation. During data retention time, the annealing of interface traps causes "apparent" program-state V T loss, since passivation of interface traps is indistinguishable from electron loss. We report, for the first time, a method that completely stops the swing degradation. We introduce an ultra-low-hydrogen array-nitride-sealing (ANS) ONO process. This novel approach provides both a robust tunnel oxide (bottom oxide, BOX) which is resistant to hot hole degradation, and a sealed BOX/Si interface that is immune to hydrogen penetration. The new device shows excellent erase-state V T stability, and
ISSN:0163-1918
2156-017X
DOI:10.1109/IEDM.2005.1609405