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Material dependence of hydrogen diffusion: implications for NBTI degradation
Negative bias temperature instability (NBTI) is known to exhibit significant recovery upon removal of the gate voltage. The process dependence of this recovery behavior is studied by using the time slope (n) as the monitor. We observe a systematic variation of n with oxide thickness, nitrogen concen...
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creator | Krishnan, A.T. Chancellor, C. Chakravarthi, S. Nicollian, P.E. Reddy, V. Varghese, A. Khamankar, R.B. Krishnan, S. |
description | Negative bias temperature instability (NBTI) is known to exhibit significant recovery upon removal of the gate voltage. The process dependence of this recovery behavior is studied by using the time slope (n) as the monitor. We observe a systematic variation of n with oxide thickness, nitrogen concentration, and fluorine implantation. Incorporation of the material dependence of the diffusivity within the reaction-diffusion (R-D) framework captures the observed trends. The consequences of this modification are (a) diffusion limitation is shown to arise from diffusion in poly-Si, rather than oxide, (b) a plausible explanation for low-voltage stress induced leakage current (LV-SILC) naturally appears. Important findings are (a) NBTI degradation remains significant at high frequencies, (b) numerical simulations at moderate frequencies can be used to predict circuit impact in the GHz regime, (c) high frequency operation can be modeled as a lower effective DC stress |
doi_str_mv | 10.1109/IEDM.2005.1609445 |
format | conference_proceeding |
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The process dependence of this recovery behavior is studied by using the time slope (n) as the monitor. We observe a systematic variation of n with oxide thickness, nitrogen concentration, and fluorine implantation. Incorporation of the material dependence of the diffusivity within the reaction-diffusion (R-D) framework captures the observed trends. The consequences of this modification are (a) diffusion limitation is shown to arise from diffusion in poly-Si, rather than oxide, (b) a plausible explanation for low-voltage stress induced leakage current (LV-SILC) naturally appears. Important findings are (a) NBTI degradation remains significant at high frequencies, (b) numerical simulations at moderate frequencies can be used to predict circuit impact in the GHz regime, (c) high frequency operation can be modeled as a lower effective DC stress</description><identifier>ISSN: 0163-1918</identifier><identifier>ISBN: 9780780392687</identifier><identifier>ISBN: 078039268X</identifier><identifier>EISSN: 2156-017X</identifier><identifier>DOI: 10.1109/IEDM.2005.1609445</identifier><language>eng</language><publisher>IEEE</publisher><subject>Degradation ; Frequency ; Hydrogen ; Monitoring ; Negative bias temperature instability ; Niobium compounds ; Nitrogen ; Stress ; Titanium compounds ; Voltage</subject><ispartof>IEEE InternationalElectron Devices Meeting, 2005. 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IEDM Technical Digest</title><addtitle>IEDM</addtitle><description>Negative bias temperature instability (NBTI) is known to exhibit significant recovery upon removal of the gate voltage. The process dependence of this recovery behavior is studied by using the time slope (n) as the monitor. We observe a systematic variation of n with oxide thickness, nitrogen concentration, and fluorine implantation. Incorporation of the material dependence of the diffusivity within the reaction-diffusion (R-D) framework captures the observed trends. The consequences of this modification are (a) diffusion limitation is shown to arise from diffusion in poly-Si, rather than oxide, (b) a plausible explanation for low-voltage stress induced leakage current (LV-SILC) naturally appears. Important findings are (a) NBTI degradation remains significant at high frequencies, (b) numerical simulations at moderate frequencies can be used to predict circuit impact in the GHz regime, (c) high frequency operation can be modeled as a lower effective DC stress</description><subject>Degradation</subject><subject>Frequency</subject><subject>Hydrogen</subject><subject>Monitoring</subject><subject>Negative bias temperature instability</subject><subject>Niobium compounds</subject><subject>Nitrogen</subject><subject>Stress</subject><subject>Titanium compounds</subject><subject>Voltage</subject><issn>0163-1918</issn><issn>2156-017X</issn><isbn>9780780392687</isbn><isbn>078039268X</isbn><fulltext>true</fulltext><rsrctype>conference_proceeding</rsrctype><creationdate>2005</creationdate><recordtype>conference_proceeding</recordtype><sourceid>6IE</sourceid><recordid>eNotkMtOwzAURC0eEqH0AxAb_0DCvX4lZgelQKQUNlmwq5zYLkZpEjll0b8ngkojjeZIM4sh5BYhQwR9X66fNxkDkBkq0ELIM5IwlCoFzD_PyVLnBczimqkivyAJoOIpaiyuyPU0fQOwXGqZkGpjDi4G01HrRtdb17eODp5-HW0cdq6nNnj_M4Whf6BhP3ahNYc5TNQPkb4_1eXc20Vj_-gNufSmm9zy5AtSv6zr1VtafbyWq8cqDRoOqdFOAVPWFsw2GrX0aFXbyEIYYaT1TLRWouYSvcSctTMUTuUMOFeq4Q1fkLv_2eCc244x7E08bk8_8F8DVk9T</recordid><startdate>2005</startdate><enddate>2005</enddate><creator>Krishnan, A.T.</creator><creator>Chancellor, C.</creator><creator>Chakravarthi, S.</creator><creator>Nicollian, P.E.</creator><creator>Reddy, V.</creator><creator>Varghese, A.</creator><creator>Khamankar, R.B.</creator><creator>Krishnan, S.</creator><general>IEEE</general><scope>6IE</scope><scope>6IH</scope><scope>CBEJK</scope><scope>RIE</scope><scope>RIO</scope></search><sort><creationdate>2005</creationdate><title>Material dependence of hydrogen diffusion: implications for NBTI degradation</title><author>Krishnan, A.T. ; Chancellor, C. ; Chakravarthi, S. ; Nicollian, P.E. ; Reddy, V. ; Varghese, A. ; Khamankar, R.B. ; Krishnan, S.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-i90t-a9e6026dd82db9195f1d6cb584a4a5df24cd519351f5172c4a54e67203366b3b3</frbrgroupid><rsrctype>conference_proceedings</rsrctype><prefilter>conference_proceedings</prefilter><language>eng</language><creationdate>2005</creationdate><topic>Degradation</topic><topic>Frequency</topic><topic>Hydrogen</topic><topic>Monitoring</topic><topic>Negative bias temperature instability</topic><topic>Niobium compounds</topic><topic>Nitrogen</topic><topic>Stress</topic><topic>Titanium compounds</topic><topic>Voltage</topic><toplevel>online_resources</toplevel><creatorcontrib>Krishnan, A.T.</creatorcontrib><creatorcontrib>Chancellor, C.</creatorcontrib><creatorcontrib>Chakravarthi, S.</creatorcontrib><creatorcontrib>Nicollian, P.E.</creatorcontrib><creatorcontrib>Reddy, V.</creatorcontrib><creatorcontrib>Varghese, A.</creatorcontrib><creatorcontrib>Khamankar, R.B.</creatorcontrib><creatorcontrib>Krishnan, S.</creatorcontrib><collection>IEEE Electronic Library (IEL) Conference Proceedings</collection><collection>IEEE Proceedings Order Plan (POP) 1998-present by volume</collection><collection>IEEE Xplore All Conference Proceedings</collection><collection>IEEE Xplore</collection><collection>IEEE Proceedings Order Plans (POP) 1998-present</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Krishnan, A.T.</au><au>Chancellor, C.</au><au>Chakravarthi, S.</au><au>Nicollian, P.E.</au><au>Reddy, V.</au><au>Varghese, A.</au><au>Khamankar, R.B.</au><au>Krishnan, S.</au><format>book</format><genre>proceeding</genre><ristype>CONF</ristype><atitle>Material dependence of hydrogen diffusion: implications for NBTI degradation</atitle><btitle>IEEE InternationalElectron Devices Meeting, 2005. IEDM Technical Digest</btitle><stitle>IEDM</stitle><date>2005</date><risdate>2005</risdate><spage>4 pp.</spage><epage>691</epage><pages>4 pp.-691</pages><issn>0163-1918</issn><eissn>2156-017X</eissn><isbn>9780780392687</isbn><isbn>078039268X</isbn><abstract>Negative bias temperature instability (NBTI) is known to exhibit significant recovery upon removal of the gate voltage. The process dependence of this recovery behavior is studied by using the time slope (n) as the monitor. We observe a systematic variation of n with oxide thickness, nitrogen concentration, and fluorine implantation. Incorporation of the material dependence of the diffusivity within the reaction-diffusion (R-D) framework captures the observed trends. The consequences of this modification are (a) diffusion limitation is shown to arise from diffusion in poly-Si, rather than oxide, (b) a plausible explanation for low-voltage stress induced leakage current (LV-SILC) naturally appears. Important findings are (a) NBTI degradation remains significant at high frequencies, (b) numerical simulations at moderate frequencies can be used to predict circuit impact in the GHz regime, (c) high frequency operation can be modeled as a lower effective DC stress</abstract><pub>IEEE</pub><doi>10.1109/IEDM.2005.1609445</doi></addata></record> |
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subjects | Degradation Frequency Hydrogen Monitoring Negative bias temperature instability Niobium compounds Nitrogen Stress Titanium compounds Voltage |
title | Material dependence of hydrogen diffusion: implications for NBTI degradation |
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