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Sub-15 ps gate delay with new AC-coupled active pull-down ECL circuit
An ECL (emitter coupled logic) circuit with an AC-coupled active pull-down emitter follower configuration is described. An unloaded ring oscillator gate delay of 13.2 ps has been achieved at 6.2 mW, in a 50 GHz-f/sub T/ ion-implanted silicon bipolar technology. This circuit could be useful as an int...
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Main Authors: | , , , , , |
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Format: | Conference Proceeding |
Language: | English |
Subjects: | |
Online Access: | Request full text |
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Summary: | An ECL (emitter coupled logic) circuit with an AC-coupled active pull-down emitter follower configuration is described. An unloaded ring oscillator gate delay of 13.2 ps has been achieved at 6.2 mW, in a 50 GHz-f/sub T/ ion-implanted silicon bipolar technology. This circuit could be useful as an internal gate operating at low-power and as an I/O gate to drive a large capacitive load at high-power. In both cases, this circuit offers superior power-delay performance compared to conventional ECL circuits.< > |
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DOI: | 10.1109/BIPOL.1991.160971 |