Advanced thermal processing of semiconductor materials in the msec-range

This paper reviews the advances that flash lamp annealing brings to the processing of the most frequently used semiconductor materials, namely silicon and silicon carbide, thus enabling the fabrication of novel microelectronic structures and materials. The paper describes how such developments can t...

Full description

Saved in:
Bibliographic Details
Main Authors: Skorupa, W., Yankov, R.A., Voelskow, M., Anwand, W., Panknin, D., McMahon, R.A., Smith, M., Gebel, T., Rebohle, L., Fendler, R., Hentsch, W.
Format: Conference Proceeding
Language:English
Subjects:
Annealing
Crystalline materials
Crystallization
Fabrication
Lamps
Microelectronics
Paper technology
Semiconductor materials
Semiconductor thin films
Silicon carbide
Online Access:Request full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:This paper reviews the advances that flash lamp annealing brings to the processing of the most frequently used semiconductor materials, namely silicon and silicon carbide, thus enabling the fabrication of novel microelectronic structures and materials. The paper describes how such developments can translate into important practical applications leading to a wide range of technological benefits. Opportunities in ultra-shallow junction formation, heteroepitaxial growth of thin films of cubic silicon carbide on silicon, and crystallization of amorphous silicon films, along with the technical reasons for using flash lamp annealing are discussed in the context of state-of-the-art materials processing
ISSN:1944-0251
1944-026X
DOI:10.1109/RTP.2005.1613684