Dislocation in lattice-mismatched InGaAs/GaAs heterostructures as a factor of optoelectronic device degradation

In this paper, two deep electron traps (E1 or the extended defect and E2 or the point defect) have been detected in partially relaxed InGaAs/GaAs heterostructure by means of deep level transient spectroscopy (DLTS) technique

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Bibliographic Details
Main Authors: Gelczuk, L., Jozwiak, G., Dabrowska-Szata, M., Radziewicz, D.
Format: Conference Proceeding
Language:English
Subjects:
Electrochemical impedance spectroscopy
Electron beams
Electron traps
Energy states
Epitaxial layers
Gallium arsenide
Indium gallium arsenide
Optical microscopy
Photonic band gap
Scanning electron microscopy
Online Access:Request full text
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Description
Summary:In this paper, two deep electron traps (E1 or the extended defect and E2 or the point defect) have been detected in partially relaxed InGaAs/GaAs heterostructure by means of deep level transient spectroscopy (DLTS) technique
ISSN:1939-4381
2576-9405
DOI:10.1109/STYSW.2005.1617792