Characterization of wet etching process for In/sub 0.53/Ga/sub 0.47/As epitaxy layer using surface profiling technique

Characterization of the wet etching process for an InGaAs epitaxy layer using surface profiling technique is reported. Surface profiling technique allows a 2D reconstruction view of the etched regions showing both the vertical and horizontal dimensions accurately. The etchant used is a mixture of ph...

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Bibliographic Details
Main Authors: Ahmad, M.H.F., Ehsan, A.A., Lee Hock Guan, Shaari, S.
Format: Conference Proceeding
Language:English
Subjects:
Chemicals
Dry etching
Epitaxial growth
Fabrication
Indium gallium arsenide
Indium phosphide
PIN photodiodes
Resists
Surface reconstruction
Wet etching
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Summary:Characterization of the wet etching process for an InGaAs epitaxy layer using surface profiling technique is reported. Surface profiling technique allows a 2D reconstruction view of the etched regions showing both the vertical and horizontal dimensions accurately. The etchant used is a mixture of phosphoric acid (H/sub 3/PO/sub 4/), hydrogen peroxide (H/sub 2/O/sub 2/) and deionised water (H/sub 2/O) in a ratio of 1-1-8. Several etch times are selected which ranges from 1.5, 2, 4, 7 and 10 minutes. The etching depths are measured using Tencor P-12 surface profiler tool. The results showed that the etched depth of InGaAs is proportional to the etching time.
DOI:10.1109/SMELEC.2004.1620932