Non-Abrupt Junctions InP DHBT Power Amplifier in Class-AB CDMA Operation

InGaAs/InP double heterojunction bipolar transistors (DHBTs) with non-abrupt junctions have been utilized to achieve a high efficiency class-AB CDMA power amplifier (PA). InGaAs/InAlAs superlattice layers are inserted at the emitter-base junction and the base-collector junction to remove abrupt barr...

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Bibliographic Details
Main Authors: Sawada, K., Uemura, M., Koizumi, E., Hase, I., Wada, S.
Format: Conference Proceeding
Language:English
Subjects:
Double heterojunction bipolar transistors
High power amplifiers
Indium compounds
Indium gallium arsenide
Indium phosphide
Low voltage
Multiaccess communication
Operational amplifiers
Power amplifiers
Superlattices
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Summary:InGaAs/InP double heterojunction bipolar transistors (DHBTs) with non-abrupt junctions have been utilized to achieve a high efficiency class-AB CDMA power amplifier (PA). InGaAs/InAlAs superlattice layers are inserted at the emitter-base junction and the base-collector junction to remove abrupt barriers in the conduction band. These non-abrupt junctions provide a low knee voltage in collector current-voltage characteristics, enabling a high efficiency, low distortion operation. We fabricated a large emitter-periphery device of 320 mum 2 and obtained a 16.0 dBm output power with 54% PAE, at a -41 dBc adjacent channel leakage power ratio (ACLR) and a supply voltage of 3.5 V in a 900 MHz WCDMA class-AB operation. The total collector current consumed is 21 mA. Using InP-related materials, we will realize PA modules with low supply voltages for future mobile communication systems
ISSN:1092-8669
DOI:10.1109/ICIPRM.2006.1634179