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Non-Abrupt Junctions InP DHBT Power Amplifier in Class-AB CDMA Operation
InGaAs/InP double heterojunction bipolar transistors (DHBTs) with non-abrupt junctions have been utilized to achieve a high efficiency class-AB CDMA power amplifier (PA). InGaAs/InAlAs superlattice layers are inserted at the emitter-base junction and the base-collector junction to remove abrupt barr...
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creator | Sawada, K. Uemura, M. Koizumi, E. Hase, I. Wada, S. |
description | InGaAs/InP double heterojunction bipolar transistors (DHBTs) with non-abrupt junctions have been utilized to achieve a high efficiency class-AB CDMA power amplifier (PA). InGaAs/InAlAs superlattice layers are inserted at the emitter-base junction and the base-collector junction to remove abrupt barriers in the conduction band. These non-abrupt junctions provide a low knee voltage in collector current-voltage characteristics, enabling a high efficiency, low distortion operation. We fabricated a large emitter-periphery device of 320 mum 2 and obtained a 16.0 dBm output power with 54% PAE, at a -41 dBc adjacent channel leakage power ratio (ACLR) and a supply voltage of 3.5 V in a 900 MHz WCDMA class-AB operation. The total collector current consumed is 21 mA. Using InP-related materials, we will realize PA modules with low supply voltages for future mobile communication systems |
doi_str_mv | 10.1109/ICIPRM.2006.1634179 |
format | conference_proceeding |
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InGaAs/InAlAs superlattice layers are inserted at the emitter-base junction and the base-collector junction to remove abrupt barriers in the conduction band. These non-abrupt junctions provide a low knee voltage in collector current-voltage characteristics, enabling a high efficiency, low distortion operation. We fabricated a large emitter-periphery device of 320 mum 2 and obtained a 16.0 dBm output power with 54% PAE, at a -41 dBc adjacent channel leakage power ratio (ACLR) and a supply voltage of 3.5 V in a 900 MHz WCDMA class-AB operation. The total collector current consumed is 21 mA. 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InGaAs/InAlAs superlattice layers are inserted at the emitter-base junction and the base-collector junction to remove abrupt barriers in the conduction band. These non-abrupt junctions provide a low knee voltage in collector current-voltage characteristics, enabling a high efficiency, low distortion operation. We fabricated a large emitter-periphery device of 320 mum 2 and obtained a 16.0 dBm output power with 54% PAE, at a -41 dBc adjacent channel leakage power ratio (ACLR) and a supply voltage of 3.5 V in a 900 MHz WCDMA class-AB operation. The total collector current consumed is 21 mA. Using InP-related materials, we will realize PA modules with low supply voltages for future mobile communication systems</description><subject>Double heterojunction bipolar transistors</subject><subject>High power amplifiers</subject><subject>Indium compounds</subject><subject>Indium gallium arsenide</subject><subject>Indium phosphide</subject><subject>Low voltage</subject><subject>Multiaccess communication</subject><subject>Operational amplifiers</subject><subject>Power amplifiers</subject><subject>Superlattices</subject><issn>1092-8669</issn><isbn>0780395581</isbn><isbn>9780780395589</isbn><fulltext>true</fulltext><rsrctype>conference_proceeding</rsrctype><creationdate>2006</creationdate><recordtype>conference_proceeding</recordtype><sourceid>6IE</sourceid><recordid>eNotj81Og0AcxDdRE2vtE_SyLwD-l_0-UqoF01piuDcL7CZrKBCWxvj21tjTzGF-kxmE1gRiQkC_FFlRfh7iBEDERFBGpL5DTyAVUM25IvdocY0lkRJCP6JVCF8AQLSQTMAC5R9DH6X1dBln_H7pm9kPfcBFX-JtvqlwOXzbCafnsfPOX53vcdaZEKJ0g7PtIcXH0U7mD3pGD850wa5uukTV22uV5dH-uCuydB95DXPUEmdc7VzCjeaSKd4kQFjCmdWSqwaEIqoVnBJitWFAk1o7Ro0Q6rpZ2pYu0fq_1ltrT-Pkz2b6Od1-019rbEm1</recordid><startdate>2006</startdate><enddate>2006</enddate><creator>Sawada, K.</creator><creator>Uemura, M.</creator><creator>Koizumi, E.</creator><creator>Hase, I.</creator><creator>Wada, S.</creator><general>IEEE</general><scope>6IE</scope><scope>6IH</scope><scope>CBEJK</scope><scope>RIE</scope><scope>RIO</scope></search><sort><creationdate>2006</creationdate><title>Non-Abrupt Junctions InP DHBT Power Amplifier in Class-AB CDMA Operation</title><author>Sawada, K. ; Uemura, M. ; Koizumi, E. ; Hase, I. ; Wada, S.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-i90t-d1fafbff25a957485c2014254e9758c06818d65311e9a4032b9f43a6680017ed3</frbrgroupid><rsrctype>conference_proceedings</rsrctype><prefilter>conference_proceedings</prefilter><language>eng</language><creationdate>2006</creationdate><topic>Double heterojunction bipolar transistors</topic><topic>High power amplifiers</topic><topic>Indium compounds</topic><topic>Indium gallium arsenide</topic><topic>Indium phosphide</topic><topic>Low voltage</topic><topic>Multiaccess communication</topic><topic>Operational amplifiers</topic><topic>Power amplifiers</topic><topic>Superlattices</topic><toplevel>online_resources</toplevel><creatorcontrib>Sawada, K.</creatorcontrib><creatorcontrib>Uemura, M.</creatorcontrib><creatorcontrib>Koizumi, E.</creatorcontrib><creatorcontrib>Hase, I.</creatorcontrib><creatorcontrib>Wada, S.</creatorcontrib><collection>IEEE Electronic Library (IEL) Conference Proceedings</collection><collection>IEEE Proceedings Order Plan (POP) 1998-present by volume</collection><collection>IEEE Xplore All Conference Proceedings</collection><collection>IEL</collection><collection>IEEE Proceedings Order Plans (POP) 1998-present</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Sawada, K.</au><au>Uemura, M.</au><au>Koizumi, E.</au><au>Hase, I.</au><au>Wada, S.</au><format>book</format><genre>proceeding</genre><ristype>CONF</ristype><atitle>Non-Abrupt Junctions InP DHBT Power Amplifier in Class-AB CDMA Operation</atitle><btitle>2006 International Conference on Indium Phosphide and Related Materials Conference Proceedings</btitle><stitle>ICIPRM</stitle><date>2006</date><risdate>2006</risdate><spage>317</spage><epage>320</epage><pages>317-320</pages><issn>1092-8669</issn><isbn>0780395581</isbn><isbn>9780780395589</isbn><abstract>InGaAs/InP double heterojunction bipolar transistors (DHBTs) with non-abrupt junctions have been utilized to achieve a high efficiency class-AB CDMA power amplifier (PA). InGaAs/InAlAs superlattice layers are inserted at the emitter-base junction and the base-collector junction to remove abrupt barriers in the conduction band. These non-abrupt junctions provide a low knee voltage in collector current-voltage characteristics, enabling a high efficiency, low distortion operation. We fabricated a large emitter-periphery device of 320 mum 2 and obtained a 16.0 dBm output power with 54% PAE, at a -41 dBc adjacent channel leakage power ratio (ACLR) and a supply voltage of 3.5 V in a 900 MHz WCDMA class-AB operation. The total collector current consumed is 21 mA. Using InP-related materials, we will realize PA modules with low supply voltages for future mobile communication systems</abstract><pub>IEEE</pub><doi>10.1109/ICIPRM.2006.1634179</doi><tpages>4</tpages></addata></record> |
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issn | 1092-8669 |
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source | IEEE Electronic Library (IEL) Conference Proceedings |
subjects | Double heterojunction bipolar transistors High power amplifiers Indium compounds Indium gallium arsenide Indium phosphide Low voltage Multiaccess communication Operational amplifiers Power amplifiers Superlattices |
title | Non-Abrupt Junctions InP DHBT Power Amplifier in Class-AB CDMA Operation |
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