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Non-Abrupt Junctions InP DHBT Power Amplifier in Class-AB CDMA Operation

InGaAs/InP double heterojunction bipolar transistors (DHBTs) with non-abrupt junctions have been utilized to achieve a high efficiency class-AB CDMA power amplifier (PA). InGaAs/InAlAs superlattice layers are inserted at the emitter-base junction and the base-collector junction to remove abrupt barr...

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Main Authors: Sawada, K., Uemura, M., Koizumi, E., Hase, I., Wada, S.
Format: Conference Proceeding
Language:English
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Uemura, M.
Koizumi, E.
Hase, I.
Wada, S.
description InGaAs/InP double heterojunction bipolar transistors (DHBTs) with non-abrupt junctions have been utilized to achieve a high efficiency class-AB CDMA power amplifier (PA). InGaAs/InAlAs superlattice layers are inserted at the emitter-base junction and the base-collector junction to remove abrupt barriers in the conduction band. These non-abrupt junctions provide a low knee voltage in collector current-voltage characteristics, enabling a high efficiency, low distortion operation. We fabricated a large emitter-periphery device of 320 mum 2 and obtained a 16.0 dBm output power with 54% PAE, at a -41 dBc adjacent channel leakage power ratio (ACLR) and a supply voltage of 3.5 V in a 900 MHz WCDMA class-AB operation. The total collector current consumed is 21 mA. Using InP-related materials, we will realize PA modules with low supply voltages for future mobile communication systems
doi_str_mv 10.1109/ICIPRM.2006.1634179
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source IEEE Electronic Library (IEL) Conference Proceedings
subjects Double heterojunction bipolar transistors
High power amplifiers
Indium compounds
Indium gallium arsenide
Indium phosphide
Low voltage
Multiaccess communication
Operational amplifiers
Power amplifiers
Superlattices
title Non-Abrupt Junctions InP DHBT Power Amplifier in Class-AB CDMA Operation
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