High-speed InGaAs/InP composite collector bipolar transistors

Summary form only given. The authors describe a composite collector bipolar transistor structure capable of high-speed and high breakdown voltage (BV/sub CEO/). The structure uses a composite collector of InGaAs and InP. f/sub T/=120 GHz at V/sub CE/=1.5 V at a current density of 77 kA/cm/sup 2/ wer...

Full description

Saved in:
Bibliographic Details
Published in:IEEE transactions on electron devices 1992-11, Vol.39 (11), p.2658
Main Authors: Feygenson, A., Hamm, R.A., Ritter, D., Smith, P.R., Montgomery, R.K., Yadvish, R.D., Temkin, H.
Format: Article
Language:English
Subjects:
Bandwidth
Bipolar transistors
Epitaxial growth
Gain
Indium gallium arsenide
Indium phosphide
Microwave transistors
Planarization
Substrates
Voltage
Citations: Items that this one cites
Items that cite this one
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:Summary form only given. The authors describe a composite collector bipolar transistor structure capable of high-speed and high breakdown voltage (BV/sub CEO/). The structure uses a composite collector of InGaAs and InP. f/sub T/=120 GHz at V/sub CE/=1.5 V at a current density of 77 kA/cm/sup 2/ were obtained. The breakdown voltage BV/sub CEO/ is greater than 5 V, and the output conductance is essentially independent of the collector voltage. Microwave transistors with an emitter size of 3*10 mu m/sup 2/ were fabricated by a self-aligned process. Microwave measurements were made from 100 MHz to 40 GHz as a function of the collector current and V/sub CE/. The authors have also fabricated and tested transimpedance amplifiers based on the composite collector transistors.< >
ISSN:0018-9383
1557-9646
DOI:10.1109/16.163520