Multi-frequency laser monolithically integrating InGaAsP gain elements with amorphous silicon AWG

We demonstrate a photonic integrated circuit using a novel monolithic integration platform combining InGaAsP gain elements and index matched amorphous silicon waveguide devices. The AWG based multi-frequency laser emits eight 100-GHz-spaced wavelengths near 1550 nm.

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Bibliographic Details
Main Authors: Kwakernaak, M.H., Chan, W.K., Maley, N., Mohseni, H., Yang, L., Capewell, D.R., Kharas, B., Frantz, V., Mood, T., Pajer, G.A., Ackerman, D.A., Kim, J.G., Lee, D.H.
Format: Conference Proceeding
Language:English
Subjects:
Amorphous silicon
Arrayed waveguide gratings
Indium phosphide
Optical materials
Optical refraction
Optical variables control
Optical waveguides
Photonic integrated circuits
Substrates
Waveguide lasers
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Description
Summary:We demonstrate a photonic integrated circuit using a novel monolithic integration platform combining InGaAsP gain elements and index matched amorphous silicon waveguide devices. The AWG based multi-frequency laser emits eight 100-GHz-spaced wavelengths near 1550 nm.
DOI:10.1109/OFC.2006.215482