Post Implant Strip Optimization for 90nm and Beyond Technologies

Optical emission spectroscopy, SEM, and SIMS were used to analyze the modified layer formed during exposure of resist materials to ion implant conditions and to characterize the removal rate of this modified layer upon exposure to various plasma strip chemistries on commercial strip tools. This meth...

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Bibliographic Details
Main Authors: Fuller, N.C.M., Santiago, A., Mello, K., Chienfan Yu, Molis, S.
Format: Conference Proceeding
Language:English
Subjects:
Chemical technology
Implants
Optical materials
Particle beam optics
Plasma applications
Plasma chemistry
Resists
Spectroscopy
Stimulated emission
Strips
Online Access:Request full text
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Description
Summary:Optical emission spectroscopy, SEM, and SIMS were used to analyze the modified layer formed during exposure of resist materials to ion implant conditions and to characterize the removal rate of this modified layer upon exposure to various plasma strip chemistries on commercial strip tools. This methodology was used to evaluate candidate strip chemistries for reducing post implant strip defectivity and increasing device functional yield
ISSN:1078-8743
2376-6697
DOI:10.1109/ASMC.2006.1638770