MOSFET hot-carrier reliability improvement by forward-body bias

Active threshold voltage V/sub TH/ control via well-substrate biasing can be utilized to satisfy International Roadmap for Semiconductors performance and standby power requirements for CMOS technology beyond the hp65-nm node. In this letter, the impact of substrate bias V/sub SUB/ on hot-carrier rel...

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Bibliographic Details
Published in:IEEE electron device letters 2006-07, Vol.27 (7), p.605-608
Main Authors: Hokazono, A., Balasubramanian, S., Ishimaru, K., Ishiuchi, H., Chenming Hu, Tsu-Jae King Liu
Format: Article
Language:English
Subjects:
Active control
Applied sciences
Bias
CMOS
CMOS technology
Degradation
Design. Technologies. Operation analysis. Testing
Devices
Electronics
Exact sciences and technology
Forward-body bias
Gates
Hot carriers
hot-carrier reliability
Integrated circuits
Mathematical models
MOS devices
MOSFET
MOSFET circuits
MOSFETs
Research and development
reverse-body bias
Scalability
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Semiconductors
substrate bias
Substrates
Threshold voltage
Transistors
Voltage control
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Summary:Active threshold voltage V/sub TH/ control via well-substrate biasing can be utilized to satisfy International Roadmap for Semiconductors performance and standby power requirements for CMOS technology beyond the hp65-nm node. In this letter, the impact of substrate bias V/sub SUB/ on hot-carrier reliability is presented. The impact varies with the gate length and body effect factor. These findings are explained, and the effects of future scaling are discussed using a quasi-two-dimensional model. Significant and important improvement in hot-carrier lifetime with forward-bias V/sub SUB/ can be expected for deeply scaled CMOS devices, making it an attractive method for extending the scalability of bulk-Si transistor technology.
ISSN:0741-3106
1558-0563
DOI:10.1109/LED.2006.877306