Spectral photoresponse of advanced interconnects: a possible solution to the ITRS most difficult characterization challenges

The spectral photoresponse of advanced interconnects is potentially interesting for the precise characterization of advanced interconnects, using standard comb test structures under illumination. This electro-optical method provides detailed information of the chemical composition of each layer of t...

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Bibliographic Details
Main Authors: Guedj, C., Arnal, V., Girault, V., Imbert, G., Daamen, R., Hoofman, R.J.O.M., Gaillard, F., Gosset, L., Assous, M., Bouchu, D., Mitard, J., Toffoli, A., Jousseaume, V., Favennec, L., Stich, A., Pamler, W., Gabric, Z., Torres, J., Passemard, G., Arnaud, L.
Format: Conference Proceeding
Language:English
Subjects:
Absorption
Chemicals
Dielectric materials
Dielectric measurements
Lighting
Optical interconnections
Photoconductivity
Photonic band gap
Silicon carbide
Strain measurement
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Summary:The spectral photoresponse of advanced interconnects is potentially interesting for the precise characterization of advanced interconnects, using standard comb test structures under illumination. This electro-optical method provides detailed information of the chemical composition of each layer of the dielectric stack via their bandgap. In addition, this non-destructive characterization is sensitive to internal strain, and is adapted to sub-32 nm generations
ISSN:2380-632X
2380-6338
DOI:10.1109/IITC.2006.1648695