Self-Amorphizing Gas Cluster Ion Beam Technology and Combination with Laser Spike Anneal for Highly Scaled Source Drain Junction

High energy borane (B 2 H 6 ) gas cluster ion beam (GCIB) successfully enables a sub-10 nm box-shaped dopant profile without channeling tail, and steep gradient (2.5 nm/dec) in lateral direction. pFET using GCIB source/drain extension shows superior suppression of short channel effects and reduces t...

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Main Authors: Ho Lee, Hwa Sung Rhee, Tetsuji Ueno, Myung Sun Kim, Ji Hye Yi, Cho, H.S., Youngsu Chung, Seulgi Kim, Hion Suck Baik, Lucia Feng, Yun Wang, Hautala, J., Skinner, W., Geum-Jong Bae, Nae-In Lee, Ho-Kyu Kang
Format: Conference Proceeding
Language:English
Subjects:
Annealing
Boron
Capacitance
Gas lasers
Implants
Ion beams
Logic testing
Sun
Tail
Temperature
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Summary:High energy borane (B 2 H 6 ) gas cluster ion beam (GCIB) successfully enables a sub-10 nm box-shaped dopant profile without channeling tail, and steep gradient (2.5 nm/dec) in lateral direction. pFET using GCIB source/drain extension shows superior suppression of short channel effects and reduces the dependency of drive current on gate overlap capacitance variation for scaled devices. Moreover, the perimeter leakage component in p+/n-well junction was reduced compared to the conventional co-implantation process with pre-amorphization, which might come from novel self-amorphization mechanism by energized clusters without foreign impurities such as Ge and F. For further scaled devices, GCIB can provide more efficient boron activation by laser spike annealing (LSA) while maintaining the scaled extension profile by combination with the reduced temperature spike RTA
DOI:10.1109/IWJT.2006.220857