Thermal runaway in integrated circuits

In deep submicrometer technologies, increased standby leakage current in high-performance processors results in increased junction temperature. Elevated junction temperature causes further increase on the standby leakage current. The standby leakage current is expected to increase even more under th...

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Bibliographic Details
Published in:IEEE transactions on device and materials reliability 2006-06, Vol.6 (2), p.300-305
Main Authors: Vassighi, A., Sachdev, M.
Format: Magazinearticle
Language:English
Subjects:
Burn-in
Circuit testing
Cooling
Devices
Elevated
Failure analysis
Integrated circuits (ICs)
Leakage current
microprocessor
Microprocessors
Processors
Temperature measurement
Thermal degradation
Thermal management
Thermal runaway
Thermal stresses
Voltage
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Summary:In deep submicrometer technologies, increased standby leakage current in high-performance processors results in increased junction temperature. Elevated junction temperature causes further increase on the standby leakage current. The standby leakage current is expected to increase even more under the burn-in environment leading to still higher junction temperature and possibly the thermal runaway. In this paper, for the first time the concept of thermal runaway and the conditions that lead to thermal runaway is described. Also, the thermal management of high-performance microprocessors to avoid thermal runaway is investigated
ISSN:1530-4388
1558-2574
DOI:10.1109/TDMR.2006.876577