Low resistance anodized Ta/TaN line TFT-LCD

A low-resistance address and Cs lines were realized using a double-layer structure of alpha -Ta on TaN film, which had one-seventh of the conventional Ta resistivity. Point defects in TFT-LCDs (thin-film transistor liquid crystal displays), due to short circuits between pixel electrode and the Cs li...

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Bibliographic Details
Main Authors: Ikeda, M., Murooka, M., Higuchi, M., Taniguchi, Y., Nishimura, K.
Format: Conference Proceeding
Language:English
Subjects:
Capacitance
Circuits
Conductivity
Electrodes
Insulation
Laboratories
Leakage current
Manufacturing
Sputtering
Voltage
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Summary:A low-resistance address and Cs lines were realized using a double-layer structure of alpha -Ta on TaN film, which had one-seventh of the conventional Ta resistivity. Point defects in TFT-LCDs (thin-film transistor liquid crystal displays), due to short circuits between pixel electrode and the Cs line, were decreased by a small leak current and pinhole-free anodic oxide film on Ta/TaN/sub x/. As a result, the PCVD (plasma chemical vapor deposition) machine running time can be increased, because TFT arrays become more dust tolerant.< >
DOI:10.1109/DISPL.1991.167441