An integrated patch-clamp amplifier in silicon-on-sapphire CMOS

We fabricated an integrated patch-clamp amplifier capable of recording from pico- to tens of micro-amperes of current. The high-dynamic range of seven decades and the pico-ampere sensitivity of the instrument was designed for whole-cell patch-clamp recordings. The prototype was fabricated on a 0.5mu...

Full description

Saved in:
Bibliographic Details
Main Authors: Farah Laiwalla, Klemic, K.G., Sigworth, F.J., Culurciello, E.
Format: Conference Proceeding
Language:English
Subjects:
Bandwidth
Biomembranes
Circuit testing
Clamps
Drugs
Electric variables measurement
Instruments
Integrated circuit measurements
Pulse amplifiers
Size measurement
Online Access:Request full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:We fabricated an integrated patch-clamp amplifier capable of recording from pico- to tens of micro-amperes of current. The high-dynamic range of seven decades and the pico-ampere sensitivity of the instrument was designed for whole-cell patch-clamp recordings. The prototype was fabricated on a 0.5mum silicon-on-sapphire process. The device employs an integrating headstage with a frequency-modulated output pulse ranging from 3Hz to 10MHz. A digital interface produces a 16bit output conversion of the input currents. We report on electrical measurements from the fabricated device, and measurements conducted on cells in a typical patch-clamp experiment
ISSN:0271-4302
2158-1525
DOI:10.1109/ISCAS.2006.1693519