Directional solidification of 80 kg multicrystalline silicon ingots by HEM

The heat exchanger method (HEM) has been utilized to produce multicrystalline silicon ingots of 44 cm square cross-section weighing 80 kg. Controlled solidification of these ingots has been achieved at the rate of approximately 10 kg/h with a total cycle time of 48 h. Large grains of 1 to 2 cm size...

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Bibliographic Details
Main Authors: Khattak, C.P., Schmid, F., Cunningham, D.W., Summers, J.G.
Format: Conference Proceeding
Language:English
Subjects:
Costs
Crystallization
Furnaces
Grain boundaries
Insulation
Photovoltaic systems
Production
Silicon compounds
Solar power generation
Throughput
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Summary:The heat exchanger method (HEM) has been utilized to produce multicrystalline silicon ingots of 44 cm square cross-section weighing 80 kg. Controlled solidification of these ingots has been achieved at the rate of approximately 10 kg/h with a total cycle time of 48 h. Large grains of 1 to 2 cm size with columnar, vertically oriented grain boundaries are produced. The resistivity within the ingot has been maintained in a narrow range (+or-0.3 Omega -cm). Diffusion lengths of 150 mu m have been measured on the wafers from the bulk of the material. The process is being utilized in production for photovoltaic applications.< >
DOI:10.1109/PVSC.1991.169354