Growth and properties of amorphous silicon films grown using pulsed-flow reactive plasma beam epitaxy

The growth and properties of a-Si:H films grown using a novel deposition technique, reactive plasma beam epitaxy, are discussed. In this technique, a remote H plasma produced in a microwave-ECR reactor is used to grow a-Si:H films at low pressures. The H ions react with SiH/sub 4/ introduced near th...

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Bibliographic Details
Main Authors: Dalal, V.L., Knox, R., Kandalaft, N., Baldwin, G.
Format: Conference Proceeding
Language:English
Subjects:
Amorphous silicon
Annealing
Epitaxial growth
Inductors
Microwave theory and techniques
Molecular beam epitaxial growth
Particle beams
Plasma properties
Semiconductor films
Substrates
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Summary:The growth and properties of a-Si:H films grown using a novel deposition technique, reactive plasma beam epitaxy, are discussed. In this technique, a remote H plasma produced in a microwave-ECR reactor is used to grow a-Si:H films at low pressures. The H ions react with SiH/sub 4/ introduced near the substrate to produce the film. The flow of SiH/sub 4/ is pulsed on or off, thereby achieving in-situ annealing of the film during growth by H ions and radicals. The films produced by this technique appear to have good electronic quality, and are more stable than the standard glow discharge films.< >
DOI:10.1109/PVSC.1991.169437