A 0.1/spl mu/m 1.8V 256Mb 66MHz Synchronous Burst PRAM

A 256Mb PRAM featuring synchronous burst read operation is developed. Using a charge-pump system, write performance is characterized at 1.8V supply. Measured initial read access time and burst-read access time are 62ns and 10ns, respectively. The maximum write throughput is 3.3MB/S

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Bibliographic Details
Main Authors: Sangbeom Kang, WooYeong Cho, Beak-Hyung Cho, Kwang-Jin Lee, Chang-Soo Lee, Hyung-Rock Oh, Byung-Gil Choi, Qi Wang, Hye-Jin Kim, Mu-Hui Park, Yu-Hwan Ro, Suyeon Kim, Du-Eung Kim, Kang-Sik Cho, Choong-Duk Ha, Youngran Kim, Ki-Sung Kim, Choong-Ryeol Hwang, Choong-Keun Kwak, Hyun-Geun Byun, Yun Sueng Shin
Format: Conference Proceeding
Language:English
Subjects:
Charge pumps
Clocks
CMOS technology
Current supplies
Flash memory
Nonvolatile memory
Phase change random access memory
Scalability
Space vector pulse width modulation
Voltage
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Description
Summary:A 256Mb PRAM featuring synchronous burst read operation is developed. Using a charge-pump system, write performance is characterized at 1.8V supply. Measured initial read access time and burst-read access time are 62ns and 10ns, respectively. The maximum write throughput is 3.3MB/S
ISSN:0193-6530
2376-8606
DOI:10.1109/ISSCC.2006.1696081