A 56nm CMOS 99mm2 8Gb Multi-level NAND Flash Memory with 10MB/s Program Throughput

Fabricated in 56nm CMOS technology, an 8Gb multi-level NAND Flash memory occupies 98.8mm 2 , with a memory cell size of 0.0075mum/b. The 10MB/s programming and 93ms block copy are also realized by introducing 8kB page, noise-cancellation circuits, external page copy and the dual V DD scheme enabling...

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Main Authors: Takeuchi, K., Kameda, Y., Fujimura, S., Otake, H., Hosono, K., Shiga, H., Watanabe, Y., Futatsuyama, T., Shindo, Y., Kojima, M., Iwai, M., Shirakawa, M., Ichige, M., Hatakeyama, K., Tanaka, S., Kamei, T., Jia-Yi Fu, Cernea, A., Yan Li, Higashitani, M., Hemink, G., Sato, S., Oowada, K., Shih-Chung Lee, Hayashida, N., Jun Wan, Lutze, J., Shouchang Tsao, Mofidi, M., Sakurai, K., Tokiwa, N., Waki, H., Nozawa, Y., Kanazawa, K., Ohshima, S.
Format: Conference Proceeding
Language:English
Subjects:
Cellular phones
Circuit noise
Clocks
Digital audio players
Digital cameras
Image sensors
Motion pictures
Pixel
Throughput
Universal Serial Bus
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Summary:Fabricated in 56nm CMOS technology, an 8Gb multi-level NAND Flash memory occupies 98.8mm 2 , with a memory cell size of 0.0075mum/b. The 10MB/s programming and 93ms block copy are also realized by introducing 8kB page, noise-cancellation circuits, external page copy and the dual V DD scheme enabling efficient use of 1MB blocks
ISSN:0193-6530
2376-8606
DOI:10.1109/ISSCC.2006.1696083