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A 56nm CMOS 99mm2 8Gb Multi-level NAND Flash Memory with 10MB/s Program Throughput
Fabricated in 56nm CMOS technology, an 8Gb multi-level NAND Flash memory occupies 98.8mm 2 , with a memory cell size of 0.0075mum/b. The 10MB/s programming and 93ms block copy are also realized by introducing 8kB page, noise-cancellation circuits, external page copy and the dual V DD scheme enabling...
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| creator | Takeuchi, K. Kameda, Y. Fujimura, S. Otake, H. Hosono, K. Shiga, H. Watanabe, Y. Futatsuyama, T. Shindo, Y. Kojima, M. Iwai, M. Shirakawa, M. Ichige, M. Hatakeyama, K. Tanaka, S. Kamei, T. Jia-Yi Fu Cernea, A. Yan Li Higashitani, M. Hemink, G. Sato, S. Oowada, K. Shih-Chung Lee Hayashida, N. Jun Wan Lutze, J. Shouchang Tsao Mofidi, M. Sakurai, K. Tokiwa, N. Waki, H. Nozawa, Y. Kanazawa, K. Ohshima, S. |
| description | Fabricated in 56nm CMOS technology, an 8Gb multi-level NAND Flash memory occupies 98.8mm 2 , with a memory cell size of 0.0075mum/b. The 10MB/s programming and 93ms block copy are also realized by introducing 8kB page, noise-cancellation circuits, external page copy and the dual V DD scheme enabling efficient use of 1MB blocks |
| doi_str_mv | 10.1109/ISSCC.2006.1696083 |
| format | conference_proceeding |
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The 10MB/s programming and 93ms block copy are also realized by introducing 8kB page, noise-cancellation circuits, external page copy and the dual V DD scheme enabling efficient use of 1MB blocks</abstract><pub>IEEE</pub><doi>10.1109/ISSCC.2006.1696083</doi></addata></record> |
| fulltext | fulltext_linktorsrc |
| identifier | ISSN: 0193-6530 |
| ispartof | 2006 IEEE International Solid State Circuits Conference - Digest of Technical Papers, 2006, p.507-516 |
| issn | 0193-6530 2376-8606 |
| language | eng |
| recordid | cdi_ieee_primary_1696083 |
| source | IEEE Electronic Library (IEL) Conference Proceedings |
| subjects | Cellular phones Circuit noise Clocks Digital audio players Digital cameras Image sensors Motion pictures Pixel Throughput Universal Serial Bus |
| title | A 56nm CMOS 99mm2 8Gb Multi-level NAND Flash Memory with 10MB/s Program Throughput |
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