The Effect of GePt Underlayer on the L10Ordering FePt Thin Films

We have explored the effect of GePt underlayer deposition temperature on L1 0 ordered FePt films. As the deposition temperature of GePt increased from room temperature (RT) to 800degC, the coercively (H c ) of the (GePt/FePt) bilayer increased from 1.1 to 9.1 kOe, which indicated the Ge 2 Pt 3 phase...

Full description

Saved in:
Bibliographic Details
Published in:IEEE transactions on magnetics 2006-10, Vol.42 (10), p.2900-2902
Main Authors: Hsu, C.J., Tsai, J.L., Hsu, C.W., Chen, S.K., Chang, W.C.
Format: Article
Language:English
Subjects:
Coercivity
Magnetic anisotropy
Magnetic field measurement
Magnetic films
Microstructure
Perpendicular magnetic anisotropy
Plasma temperature
Radio frequency
Sputtering
Transistors
Vibration measurement
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:We have explored the effect of GePt underlayer deposition temperature on L1 0 ordered FePt films. As the deposition temperature of GePt increased from room temperature (RT) to 800degC, the coercively (H c ) of the (GePt/FePt) bilayer increased from 1.1 to 9.1 kOe, which indicated the Ge 2 Pt 3 phase formed at higher deposition temperature and promoted the L1 0 ordered FePt phase formation. Under the similar process, the single layer FePt coercively was 6.9 kOe. The interlayer diffusion between GePt and FePt cannot be avoided when the GePt underlayer deposited at RT. An interesting island-like microstructure was observed when GePt underlayer deposited at higher temperature
ISSN:0018-9464
1941-0069
DOI:10.1109/TMAG.2006.879965